N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •Low On-Resistance: RDS(ON)\n•Low Input Capacitance\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified fa;

丝印代码：TK9；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

丝印代码：TK9；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

N-CHANNEL ENHANCEMENT MODE MOSFET

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Low On-Resistance

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N-CHANNEL ENHANCEMENT MODE MOSFET

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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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