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DMN62D0UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Dual N-Channel MOSFET\nLow On-Resistance\nLow Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nUltra-Small Surface Mount Package\nESD Protected Gate;

DIODES

美台半导体

DMN62D0UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DMN62D0UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Dual N-Channel MOSFET\n•Low On-Resistance\n•Low Gate Threshold Voltage\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•Ultra-Small Surface Mount Package\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Dev;

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:276.29 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:333.74 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

DMN62D0UDW产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N+N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.35 A

  • PD @ TA = +25°C:

    0.41 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    2500 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    3000 mΩ

  • VGS (th) Max:

    N/A V

  • QG Typ @ VGS = 4.5V (nC):

    0.5 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT363

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
N/A
6843
样件支持,可原厂排单订货!
Diodes Incorporated
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES/美台
20+
SMD
88800
DIODES原装优势主营型号-可开原型号增税票
DIODES
22+
NA
20000
公司只有原装 品质保证
DIODES/美台
24+
SOT363
786000
全新原装假一罚十
DIODES
2022+PB
SOT363
6000
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
DIODES
21+
SOT-363
3015
全新 发货1-2天
DIODES/美台
2019+
SOT363
78550
原厂渠道 可含税出货

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