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DMN62D0U

丝印代码:LWW;60V Dual N-Channel Enhancement Mode MOSFET

Features Fast switching Green Device Available Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:276.29 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:333.74 Kbytes Page:6 Pages

DIODES

美台半导体

更新时间:2026-3-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
N/A
6843
样件支持,可原厂排单订货!
Diodes Incorporated
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES/美台
25+
SOT-323
34242
DIODES/美台全新特价DMN62D0UW-7即刻询购立享优惠#长期有货
DIODES/美台
21+
SOT-23-3
1592
只做原装,一定有货,不止网上数量,量多可订货!
DIODES/美台
2450+
SOT-23-3
9850
只做原厂原装正品现货或订货假一赔十!
DIODES/美台
25+
SOT23
918000
明嘉莱只做原装正品现货
DIODES/美台
21+
SOT-23-3
30000
百域芯优势 实单必成 可开13点增值税
DIODES/美台
24+
SOT-23
5000
只做原装,欢迎询价,量大价优
DIODES/美台
23+
SOT-23-3
9000
原装正品假一罚百!可开增票!
DIODES/美台
22+
SOT-23-3
57399
现货,原厂原装假一罚十!

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