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DMN62D0U

丝印代码:LWW;60V Dual N-Channel Enhancement Mode MOSFET

Features Fast switching Green Device Available Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nESD Protected Up To 1kV;

DIODES

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

DMN62D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Dual N-Channel MOSFET\n•Low On-Resistance\n•Low Gate Threshold Voltage\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•Ultra-Small Surface Mount Package\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Dev;

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Anti

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •Low On-Resistance: RDS(ON)\n•Low Input Capacitance\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified fa;

DIODES

美台半导体

丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standar

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:462 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:543.89 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:545.19 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:536.15 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:537.3 Kbytes Page:7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:276.29 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:333.74 Kbytes Page:6 Pages

DIODES

美台半导体

DMN62D0U产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.38 A

  • PD @ TA = +25°C:

    0.59 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    2000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    2500 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    3000 mΩ

  • VGS (th) Max:

    1 V

  • QG Typ @ VGS = 4.5V (nC):

    0.5 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT23

更新时间:2026-5-16 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES/美台
2450+
SOT-23-3
9850
只做原厂原装正品现货或订货假一赔十!
DIODES/美台
25+
SOT23
918000
明嘉莱只做原装正品现货
DIODES/美台
21+
SOT-23-3
30000
百域芯优势 实单必成 可开13点增值税
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Diodes(美台)
2511
标准封装
12000
电子元器件采购降本30%!原厂直采,砍掉中间差价
DIODES/美台
2023+
SOT-23-3
57399
原厂全新正品旗舰店优势现货
DIODES/实单必出
24+
SOT-23
14468
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES INCORPORATED
25+
DMN62D0U-13
5864
原装原标原盒 给价就出 全网最低
DIODES/美台
2019+
SOT363
78550
原厂渠道 可含税出货

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