| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN62D0U | 丝印代码:LWW;60V Dual N-Channel Enhancement Mode MOSFET Features Fast switching Green Device Available Suit for 1.5V Gate Drive Applications | TECHPUBLIC 台舟电子 | ||
DMN62D0U | N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nESD Protected Up To 1kV; | DIODES 美台半导体 | ||
DMN62D0U | N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462 Kbytes Page:7 Pages | DIODES 美台半导体 | ||
DMN62D0U | N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462.59 Kbytes Page:6 Pages | DIODES 美台半导体 | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Dual N-Channel MOSFET\n•Low On-Resistance\n•Low Gate Threshold Voltage\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage\n•Ultra-Small Surface Mount Package\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Dev; | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti | DIODES 美台半导体 | |||
丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti | DIODES 美台半导体 | |||
丝印代码:LEE;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automo | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •Low On-Resistance: RDS(ON)\n•Low Input Capacitance\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified fa; | DIODES 美台半导体 | |||
丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automo | DIODES 美台半导体 | |||
丝印代码:TK9;N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automo | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standar | DIODES 美台半导体 | |||
丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standar | DIODES 美台半导体 | |||
丝印代码:D93;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standar | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462.59 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462.59 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:462 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:545.19 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:543.89 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:545.19 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:545.19 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:543.89 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:543.89 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:545.19 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:537.3 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:536.15 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:537.3 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:537.3 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:536.15 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:536.15 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:537.3 Kbytes Page:7 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:276.29 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
Low On-Resistance 文件:333.74 Kbytes Page:6 Pages | DIODES 美台半导体 |
DMN62D0U产品属性
- 类型
描述
- Automotive Compliant PPAP:
No
- Polarity:
N
- ESD Diodes:
Yes
- VDS:
60 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
0.38 A
- PD @ TA = +25°C:
0.59 W
- RDS(ON) Max @ VGS (10V):
N/A mΩ
- RDS(ON) Max @ VGS (4.5V):
2000 mΩ
- RDS(ON) Max @ VGS (2.5V):
2500 mΩ
- RDS(ON) Max @ VGS (1.8V):
3000 mΩ
- VGS (th) Max:
1 V
- QG Typ @ VGS = 4.5V (nC):
0.5 nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
SOT23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
2450+ |
SOT-23-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODES/美台 |
25+ |
SOT23 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
21+ |
SOT-23-3 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Diodes(美台) |
2511 |
标准封装 |
12000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
DIODES/美台 |
2023+ |
SOT-23-3 |
57399 |
原厂全新正品旗舰店优势现货 |
|||
DIODES/实单必出 |
24+ |
SOT-23 |
14468 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES INCORPORATED |
25+ |
DMN62D0U-13 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
DIODES/美台 |
2019+ |
SOT363 |
78550 |
原厂渠道 可含税出货 |
DMN62D0U规格书下载地址
DMN62D0U参数引脚图相关
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- dna芯片
- DMR09A3
- DMR09A
- DMR08C
- DMR08A
- DMR07C4
- DMR07C
- DMR07A4
- DMR07A
- DMR06C4
- DMR06C
- DMR06A4
- DMR06A
- DMR01
- DMQ-XX
- DMPE-RS
- DMP10NK
- DMP10NJ
- DMO-XX
- DMO465R
- DMO063
- DMNF1-285-C
- DMNF1-283FIB-3K
- DMN-8652
- DMN-8603
- DMN-8602
- DMN66D0LW-7
- DMN66D0LW
- DMN66D0LT-7
- DMN66D0LT
- DMN66D0LDW-7
- DMN66D0LDW
- DMN65D8LW-7
- DMN65D8LW
- DMN65D8LDW-7
- DMN65D8L-7
- DMN63D8LV-7
- DMN63D8LDW-7
- DMN63D8LDW-13
- DMN63D0LT-7
- DMN62D1SFB-7B
- DMN62D0SFD-7
- DMN62D0LFB-7B
- DMN62D0LFB-7
- DMN62D0LFB
- DMN6068SE-13
- DMN6068SE_11
- DMN6068SE
- DMN6068LK3-13
- DMN6068LK3_10
- DMN6068LK3
- DMN6066SSS-13
- DMN6066SSS
- DMN6066SSD-13
- DMN6066SSD
- DMN6040SVT-7
- DMN6040SSS-13
- DMN6040SSD-13
- DMN6040SK3-13
- DMN6040SFDE-7
- DMN601WK-7
- DMN601K
- DMN600V
- DMN5L06
- DMN5_15
- DMN5_10
- DMN100
- DMMDB4R
- DMMDB4B
- DMMDB4A
- DMMDB3R
- DMMDB3B
- DMMDB3A
- DMM-B
- DMM7512
- DMM7510
- DMM6500
- DMM4050
- DMM4040
- DMM4020
- DM-LX3
DMN62D0U数据表相关新闻
DMP3010LK3-13
产品种类: MOSFET
2023-5-29DMN601K-7
DMN601K-7
2022-8-2DMN601DWK-7
DMN601DWK-7
2021-11-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMP3007LK3-13
DMP3007LK3-13
2021-8-30DMP3018SFV-7
DMP3018SFV-7
2020-11-17
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109