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DMN601价格
参考价格：￥1.6227
型号：DMN6013LFG-7 品牌：Diodes Incorporated 备注：这里有DMN601多少钱，2025年最近7天走势，今日出价，今日竞价，DMN601批发/采购报价，DMN601行情走势销售排行榜，DMN601报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •AnalogSwitch Fea | DIODESDiodes Incorporated 美台半导体 |  |   | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •AnalogSwitch Fea | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •DualN-Chann | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •DualN-Chann | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •LowOn-Resis | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •LowOn-Resis | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedGate •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifi | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedGate •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifi | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifi | DIODESDiodes Incorporated 美台半导体 | | | |
WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree. FEATURES Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ESDProtected:1000V | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | | |
QualifiedtoAEC-Q101StandardsforHighReliability 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI짰 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI짰 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
QualifiedtoAEC-Q101StandardsforHighReliability 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI짰 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
QualifiedtoAEC-Q101StandardsforHighReliability 文件：333.04 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI 文件：521.32 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60N-ChannelEnhancementModePowerMOSFET 文件：1.27497 Mbytes Page：5 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI 文件：521.32 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
60VN-CHANNELENHANCEMENTMODEMOSFETPOWERDI 文件：521.32 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
iscN-ChannelMOSFETTransistor 文件：310.39 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：205.1 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：205.1 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：166.8 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：513.059 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：205.1 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：202.34 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：436.19 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：202.34 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：191.82 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：191.82 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：180.36 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：191.82 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：141.83 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：411.92 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：141.83 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：458.94 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：411.92 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：141.83 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：292.94 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：292.94 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：375.68 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：292.94 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：153.84 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：153.84 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：232.49 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：153.84 Kbytes Page：5 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
FastEthernetCat5eDataDouble-EndedCordset ProductDescription FastEthernetCat5eDataDouble-EndedCordset:MalestraightD-codedblackM12StandardtomalestraightD-codedblackM12Standard,shielded,50VAC /60VDC,4A;PURgreencable,4-wires,2x2x0.34mm² | BELDENBelden Inc. 百通电缆设计科技有限公司 |  | | |
MINIATUREFUSEHOLDERS 文件：99.69 Kbytes Page：1 Pages | Littelfuselittelfuse 力特力特公司 |  | | |
RCNetworkT-Filters 文件：231.56 Kbytes Page：2 Pages | BournsBourns Electronic Solutions 伯恩斯 |  | | |
WihaQualityToolsTollFree:(800)494-6104 文件：206.89 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
OpticallyIsolated5and10A/250Vac 文件：481.9 Kbytes Page：2 Pages | WILLOWWillow Technologies Ltd 柳树科技柳树科技有限公司 |  | |
DMN601产品属性
- 类型
描述
- 型号
DMN601
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
8955 |
原装现货,当天可交货,原型号开票 |
|||
DIODES |
2016+ |
SOT323 |
18000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
24+ |
SOT-323 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES/美台 |
25+ |
SOT323 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
DIODES |
1934+ |
SOT-323 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
24+ |
SOT-323 |
45000 |
热卖优势现货 |
|||
DiodesInc |
23+ |
SOT-323 |
7750 |
全新原装优势 |
|||
DIODES/美台 |
24+ |
NA |
12000 |
原装现货,专业配单专家 |
|||
DIODES/美台 |
1942+ |
SOT-323 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
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DMN601规格书下载地址
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DMN601数据表相关新闻
DMN601K-7
DMN601K-7
2022-8-2DMN601DWK-7
DMN601DWK-7
2021-11-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23，45K，21+，
2021-11-10DMN4031SSD-13
DMN4031SSD-13
2021-10-19DMP3007LK3-13
DMP3007LK3-13
2021-8-30
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