DMN601价格

参考价格:¥1.6227

型号:DMN6013LFG-7 品牌:Diodes Incorporated 备注:这里有DMN601多少钱,2025年最近7天走势,今日出价,今日竞价,DMN601批发/采购报价,DMN601行情走势销售排行榜,DMN601报价。
型号 功能描述 生产厂家 企业 LOGO 操作

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected:1000V

LEIDITECH

雷卯电子

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60 N-Channel Enhancement Mode Power MOSFET

文件:1.27497 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

isc N-Channel MOSFET Transistor

文件:310.39 Kbytes Page:2 Pages

ISC

无锡固电

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:205.1 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:205.1 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:166.8 Kbytes Page:5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:513.059 Kbytes Page:7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:205.1 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:202.34 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:436.19 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:202.34 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:180.36 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:411.92 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:458.94 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:411.92 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:292.94 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:292.94 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:375.68 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:292.94 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:232.49 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²

BELDEN

百通

Optically Isolated 5 and 10A/250 Vac

文件:481.9 Kbytes Page:2 Pages

WILLOW

DMN601产品属性

  • 类型

    描述

  • 型号

    DMN601

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

更新时间:2025-12-28 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
23+
SOT-523
50000
全新原装正品现货,支持订货
DIODES/美台
22+
SOT-523
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
DIODES
24+
SOT523
273465
原厂可订货,技术支持,直接渠道。可签保供合同
DIODES/美台
新年份
SOT-523
21000
原装正品大量现货,要多可发货,实单带接受价来谈!
DIODES
23+
NA
14300
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
DIODES/美台
23+
SOT-523-3
12730
原装正品代理渠道价格优势
DIODES/美台
21+
SOT-523
9990
只有原装
DIODES
1521+
SOT-523
10000
原装正品
DIODES/美台
25+
SOT-523
38127
DIODES/美台全新特价DMN601TK-7即刻询购立享优惠#长期有货
DIODES/美台
2025+
SOT-523
5000
原装进口价格优 请找坤融电子!

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