DMN601价格

参考价格:¥1.6227

型号:DMN6013LFG-7 品牌:Diodes Incorporated 备注:这里有DMN601多少钱,2025年最近7天走势,今日出价,今日竞价,DMN601批发/采购报价,DMN601行情走势销售排行榜,DMN601报价。
型号 功能描述 生产厂家 企业 LOGO 操作

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi

DIODES

美台半导体

We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected:1000V

LEIDITECH

雷卯电子

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件:333.04 Kbytes Page:6 Pages

DIODES

美台半导体

60 N-Channel Enhancement Mode Power MOSFET

文件:1.27497 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

文件:521.32 Kbytes Page:7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

isc N-Channel MOSFET Transistor

文件:310.39 Kbytes Page:2 Pages

ISC

无锡固电

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:205.1 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:205.1 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:166.8 Kbytes Page:5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:202.34 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:202.34 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:180.36 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:191.82 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:411.92 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:458.94 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:411.92 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:141.83 Kbytes Page:4 Pages

DIODES

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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:292.94 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:292.94 Kbytes Page:4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:232.49 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:153.84 Kbytes Page:5 Pages

DIODES

美台半导体

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²

BELDEN

百通

Optically Isolated 5 and 10A/250 Vac

文件:481.9 Kbytes Page:2 Pages

WILLOW

DMN601产品属性

  • 类型

    描述

  • 型号

    DMN601

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

更新时间:2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
24+
SOT523
273465
原厂可订货,技术支持,直接渠道。可签保供合同
DIODES/美台
24+
NA/
9250
原装现货,当天可交货,原型号开票
DIODES
2016+
SOT-523
3500
只做原装,假一罚十,公司可开17%增值税发票!
DIODES/美台
23+
SOT-523
12700
买原装认准中赛美
DIODES
24+
SOT523
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Diodes
23+
NA
6800
原装正品,力挺实单
DIODES/美台
25+
SOT-523
38127
DIODES/美台全新特价DMN601TK-7即刻询购立享优惠#长期有货
SOT-423
23+
NA
15659
振宏微专业只做正品,假一罚百!
DIODES/美台
25+
SOT-523
54648
百分百原装现货 实单必成
DIODES/美台
24+
SOT-523
6000
全新原装深圳仓库现货有单必成

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