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DMN601价格
参考价格:¥1.6227
型号:DMN6013LFG-7 品牌:Diodes Incorporated 备注:这里有DMN601多少钱,2025年最近7天走势,今日出价,今日竞价,DMN601批发/采购报价,DMN601行情走势销售排行榜,DMN601报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • DC-DC Converters • Power Management Functions • Analog Switch Fea  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Dual N-Chann  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low On-Resis  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifi  | DIODES 美台半导体  | |||
We declare that the material of product compliance with RoHS requirements and Halogen Free. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected:1000V  | LEIDITECH 雷卯电子  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET  | DIODES 美台半导体  | |||
Qualified to AEC-Q101 Standards for High Reliability 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
Qualified to AEC-Q101 Standards for High Reliability 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
Qualified to AEC-Q101 Standards for High Reliability 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰 文件:333.04 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
60 N-Channel Enhancement Mode Power MOSFET 文件:1.27497 Mbytes Page:5 Pages  | LEIDITECH 雷卯电子  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI 文件:521.32 Kbytes Page:7 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI 文件:521.32 Kbytes Page:7 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI 文件:521.32 Kbytes Page:7 Pages  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET  | DIODES 美台半导体  | |||
60V N-CHANNEL ENHANCEMENT MODE MOSFET  | DIODES 美台半导体  | |||
isc N-Channel MOSFET Transistor 文件:310.39 Kbytes Page:2 Pages  | ISC 无锡固电  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:205.1 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:205.1 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:166.8 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:513.059 Kbytes Page:7 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:205.1 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:202.34 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:436.19 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:202.34 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:191.82 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:191.82 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:180.36 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:191.82 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:141.83 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:411.92 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:141.83 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:458.94 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:411.92 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:141.83 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:292.94 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:292.94 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:375.68 Kbytes Page:6 Pages  | DIODES 美台半导体  | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:292.94 Kbytes Page:4 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:153.84 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:153.84 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:232.49 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:153.84 Kbytes Page:5 Pages  | DIODES 美台半导体  | |||
Fast Ethernet Cat5e Data Double-Ended Cordset Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²  | BELDEN 百通  | |||
Optically Isolated 5 and 10A/250 Vac 文件:481.9 Kbytes Page:2 Pages  | WILLOW  | 
DMN601产品属性
- 类型
描述
 - 型号
DMN601
 - 制造商
DIODES
 - 制造商全称
Diodes Incorporated
 - 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
DIODES  | 
24+  | 
SOT523  | 
273465  | 
原厂可订货,技术支持,直接渠道。可签保供合同  | 
|||
DIODES/美台  | 
24+  | 
NA/  | 
9250  | 
原装现货,当天可交货,原型号开票  | 
|||
DIODES  | 
2016+  | 
SOT-523  | 
3500  | 
只做原装,假一罚十,公司可开17%增值税发票!  | 
|||
DIODES/美台  | 
23+  | 
SOT-523  | 
12700  | 
买原装认准中赛美  | 
|||
DIODES  | 
24+  | 
SOT523  | 
80000  | 
只做自己库存 全新原装进口正品假一赔百 可开13%增  | 
|||
Diodes  | 
23+  | 
NA  | 
6800  | 
原装正品,力挺实单  | 
|||
DIODES/美台  | 
25+  | 
SOT-523  | 
38127  | 
DIODES/美台全新特价DMN601TK-7即刻询购立享优惠#长期有货  | 
|||
SOT-423  | 
23+  | 
NA  | 
15659  | 
振宏微专业只做正品,假一罚百!  | 
|||
DIODES/美台  | 
25+  | 
SOT-523  | 
54648  | 
百分百原装现货 实单必成  | 
|||
DIODES/美台  | 
24+  | 
SOT-523  | 
6000  | 
全新原装深圳仓库现货有单必成  | 
DMN601芯片相关品牌
DMN601规格书下载地址
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DMN601数据表相关新闻
DMN4468LSS资料规格参数
DMN4468LSS
2025-7-30DMN601K-7
DMN601K-7
2022-8-2DMN601DWK-7
DMN601DWK-7
2021-11-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMN4031SSD-13
DMN4031SSD-13
2021-10-19DMP3007LK3-13
DMP3007LK3-13
2021-8-30
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