N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate\nresistance (RDS(on)) and yet maintain superior switching\nperformance, making it ideal for high efficiency power management\napplications.

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefitss • 14mΩ @ VGS = 10V • Low Input Capacitance • Fast S

30V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Input Capacitance\nFast Switching Speed \nLow Input/Output Leakage;

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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3 V Stereo Headphone Power Amplifier

Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio

3 V Stereo Headphone Power Amplifier

Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio

Thin Type Phototransistor

■ Features 1. Thin type package (Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type ■ Applications 1. VCRs 2. Floppy disk drives

丝印代码：4800；N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1. Low gate charge 2. Surface mounted package 3. Low on-state resistance 4. Fast switching.

Vertical deflection circuit for monitor applications

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