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SI4800价格
参考价格：￥0.5200
型号：SI4800BDY-T1-E3 品牌：Vishay Siliconix 备注：这里有SI4800多少钱，2026年最近7天走势，今日出价，今日竞价，SI4800批发/采购报价，SI4800行情走势销售排行榜，SI4800报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI4800 | 丝印代码：4800；N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1. Low gate charge 2. Surface mounted package 3. Low on-state resistance 4. Fast switching. | PHILIPS 飞利浦 |   | |
SI4800 | N-channel enhancement mode field-effect transistor | ETC 知名厂家 | ETC | |
SI4800 | Power MOSFETs | NEXPERIA 安世 | | |
N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 UIS and Rg Tested | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：4800B；N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 UIS and Rg Tested | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 UIS and Rg Tested | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch | VBSEMI 微碧半导体 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 UIS and Rg Tested | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 20V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch | VBSEMI 微碧半导体 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET 文件：184.04 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：4800B；N-Channel Reduced Qg, Fast Switching MOSFET 文件：252.9 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET 文件：185.68 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET 文件：185.68 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Reduced Qg, Fast Switching MOSFET 文件：252.9 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel Reducded Qg, Fast Switching MOSFET 文件：56.32 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
3 V Stereo Headphone Power Amplifier Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio | SANYO 三洋 | | ||
3 V Stereo Headphone Power Amplifier Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio | SANYO 三洋 | | ||
Thin Type Phototransistor ■ Features 1. Thin type package (Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type ■ Applications 1. VCRs 2. Floppy disk drives | SHARPSharp Corporation 夏普 | | ||
Vertical deflection circuit for monitor applications 文件：90.95 Kbytes Page：16 Pages | PHILIPS 飞利浦 | |
SI4800产品属性
- 类型
描述
- 型号
SI4800
- 功能描述
MOSFET TAPE13 MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2016+ |
SOP8 |
35273 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHI |
24+ |
SOP8 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
22+ |
SOIC-8 |
8000 |
原装正品现货假一罚十 |
|||
VISHAY/威世 |
2025+ |
SOP8 |
5000 |
原装进口,免费送样品! |
|||
VISHAY/威世 |
24+ |
SOIC-8 |
8750 |
只做原装/假一赔十/安心咨询 |
|||
VISHAY |
24+ |
SOP8 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
SI |
2025+ |
SOP8 |
3925 |
全新原装、公司现货热卖 |
|||
VISHAY |
24+ |
SOP-8 |
8000 |
只做原装正品现货 |
|||
VISHAY/威世 |
2019+ |
SOP8 |
3333 |
原厂渠道 可含税出货 |
|||
VISHAY(威世) |
8-SO |
5035 |
全新原装正品现货可开票 |
SI4800规格书下载地址
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SI4800数据表相关新闻
SI4704-D60-GMR SI4730-D60-GUR SI4704-D60-GMR SI8641ED-B-ISR SI4705-D60-GMR SI4703-C19-GMR MCIMX6Y2CVM05AB MCIMX6U5EVM10AC LPC11E68JBD64E S9KEAZ128AMLK TJA1044GT/3实单必成
SI4704-D60-GMR SI4730-D60-GUR SI4704-D60-GMRSI8641ED-B-ISR SI4705-D60-GMR SI4703-C19-GMR MCIMX6Y2CVM05AB MCIMX6U5EVM10ACLPC11E68JBD64E S9KEAZ128AMLK TJA1044GT/3实单必成
2021-7-29SI4755-A40-GMR
RF Receiver 射频接收器 , AM/FM Radio Receiver 射频接收器 , 1227.6 MHz, 1575.42 MHz 射频接收器 , 315 MHz or 433 MHz Superheterodyne Receiver 射频接收器 , 47 MHz to 1.218 GHz 射频接收器 , 4.092 MHz to 1575.42 MHz, 8.57 MHz to 1601.718 MHz, 10.23 MHz to 156
2020-9-4SI4802DY-T1-E3
SOT-23-3 P-Channel 30 V MOSFET , N-Channel 140 A 200 V MOSFET , SOT-23-3 MOSFET , 1 Channel N-Channel 75 A 100 V MOSFET , P-Channel 60 A MOSFET , N-Channel 3 A MOSFET
2020-8-26SI4812BDY-T1-E3公司全新原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-9-12SI4804BDY-T1-E3公司全新原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-9-12SI4684DY-T1-E3深圳市睿智芯电子有限公司，只做原装正品。
制造商: Vishay 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: SO-8 商标名: TrenchFET 封装: Cut Tape 封装: Reel 高度: 1.75 mm 长度: 4.9 mm 系列: SI4 宽度: 3.9 mm 商标: Vishay / Siliconix CNHTS: 8541210000 HTS代码: 8541210095 MXHTS: 854
2019-3-19
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