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DMN3200U价格
参考价格：￥0.8989
型号：DMN3200U-7 品牌：Diodes Incorporated 备注：这里有DMN3200U多少钱，2026年最近7天走势，今日出价，今日竞价，DMN3200U批发/采购报价，DMN3200U行情走势销售排行榜，DMN3200U报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance ◾ 90mΩ @ VGS = 4.5V ◾ 110mΩ @ VGS = 2.5V ◾ 200mΩ @ VGS = 1.5V • Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Fre | DIODES 美台半导体 |   | |
DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2, 3 and 5 | ZPSEMIZP Semiconductor 至尚臻品 | | |
DMN3200U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：285.76 Kbytes Page：6 Pages | DIODES 美台半导体 | | |
DMN3200U | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance ◾ 90mΩ @ VGS = 4.5V ◾ 110mΩ @ VGS = 2.5V ◾ 200mΩ @ VGS = 1.5V • Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Fre | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.93 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：285.76 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：285.76 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high | MOTOROLA 摩托罗拉 | | ||
1.3 關m Laser-Diode DIP Module 文件：44.39 Kbytes Page：3 Pages | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |
DMN3200U产品属性
- 类型
描述
- 型号
DMN3200U
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Incorporated |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
2016+ |
SOT23 |
11800 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
DIODES/美台 |
23+ |
NA |
9990 |
只有原装 |
|||
DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES/美台 |
2540+ |
SOT-23 |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
DIODES/美台 |
21+ |
SOT-23 |
8080 |
只做原装,质量保证 |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES |
2025+ |
SOT-23 |
7695 |
全新原厂原装产品、公司现货销售 |
DMN3200U规格书下载地址
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DdatasheetPDF页码索引
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