N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Package Profile, 0.4mm Maximum Package Height  0.62mm x 0.62mm Package Footprint  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Package Profile, 0.4mm Maximum Package Height  0.62mm x 0.62mm Package Footprint  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 0.8mm x 0.6mm  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 0.8mm x 0.6mm  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3 )

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package 0.8mm x 0.6mm • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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