30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions Features and

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •100% Unclamped Inductive Switch (UIS) Test in Production\n•Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed;

丝印代码：E04；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions Features and

丝印代码：E04；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions Features and

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 100% Unclamped Inductive Switch (UIS) Test in Production\nLow On-Resistance\nLow Input Capacitance\nFast Switching Speed\nTotally Lead-Free & Fully RoHS Compliant\nHalogen and Antimony Free. “Green” Device;

mosfets

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

文件：534.16 Kbytes Page：10 Pages

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

文件：534.16 Kbytes Page：10 Pages

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

文件：534.16 Kbytes Page：10 Pages

Optocoupler with Phototriac Output

Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for h

Optocoupler with Phototriac Output

Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for h

Optocoupler with Phototriac Output

Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for h

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250 Volts Peak) The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low–current isolated ac switchin

REMOTE CONTROL TRANSMITTER FOR AUDIO AND VIDEO APPLICATIONS

DESCRIPTION The STV3012 is a general purpose infrared remote control transmitter system for low voltage supply applications. It is able to generate a total number of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press butto