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型号	功能描述	生产厂家&企业
DMN2310U	N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/1	DIODESDiodes Incorporated 美台半导体
DMN2310U-13	N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/1	DIODESDiodes Incorporated 美台半导体
DMN2310U-7	N-CHANNELENHANCEMENTMODEMOSFET Features LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/1	DIODESDiodes Incorporated 美台半导体
DMN2310UFB4	N-CHANNELENHANCEMENTMODEMOSFET Features FootprintofJust0.6mm2–ThirteenTimesSmallerthanSOT23 0.4mmProfile–IdealforLowProfileApplications LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”	DIODESDiodes Incorporated 美台半导体
DMN2310UFB4-7B	N-CHANNELENHANCEMENTMODEMOSFET Features FootprintofJust0.6mm2–ThirteenTimesSmallerthanSOT23 0.4mmProfile–IdealforLowProfileApplications LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”	DIODESDiodes Incorporated 美台半导体
DMN2310UFD	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecific	DIODESDiodes Incorporated 美台半导体
DMN2310UFD-7	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecific	DIODESDiodes Incorporated 美台半导体
DMN2310UT	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveap	DIODESDiodes Incorporated 美台半导体
DMN2310UT-13	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveap	DIODESDiodes Incorporated 美台半导体
DMN2310UT-7	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveap	DIODESDiodes Incorporated 美台半导体
DMN2310UTQ	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) Halogen-andAntimony-Free.“Green”Device(Note3) Forautomotivea	DIODESDiodes Incorporated 美台半导体
DMN2310UTQ-13	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) Halogen-andAntimony-Free.“Green”Device(Note3) Forautomotivea	DIODESDiodes Incorporated 美台半导体
DMN2310UTQ-7	N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHScompliant(Notes1&2) Halogen-andAntimony-Free.“Green”Device(Note3) Forautomotivea	DIODESDiodes Incorporated 美台半导体
DMN2310UW	20VN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchangecontrol(i.e.partsqualifiedtoAEC-Q100/101/200	DIODESDiodes Incorporated 美台半导体
DMN2310UW-13	20VN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchangecontrol(i.e.partsqualifiedtoAEC-Q100/101/200	DIODESDiodes Incorporated 美台半导体
DMN2310UW-7	20VN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Halogen-andAntimony-Free.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchangecontrol(i.e.partsqualifiedtoAEC-Q100/101/200	DIODESDiodes Incorporated 美台半导体
DMN2310UWQ	20VN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2310UWQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartis	DIODESDiodes Incorporated 美台半导体
DMN2310UWQ-13	20VN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2310UWQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartis	DIODESDiodes Incorporated 美台半导体
DMN2310UWQ-7	20VN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2310UWQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartis	DIODESDiodes Incorporated 美台半导体
2310	KNOB 文件：71.12 Kbytes Page：1 Pages	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商
2310	Pneumaticmuffler 文件：93.29 Kbytes Page：1 Pages	FESTOFesto Corporation. 费斯托
2310	NylonHoseClamps 文件：116.22 Kbytes Page：1 Pages	HeycoHeyco. 海科
2310A	LowVoltageandPowerApplications 文件：992.1 Kbytes Page：8 Pages	ETCList of Unclassifed Manufacturers 未分类制造商
2310B	LowVoltageandPowerApplications 文件：992.1 Kbytes Page：8 Pages	ETCList of Unclassifed Manufacturers 未分类制造商

DMN2310U供应商更多...

更新时间：2025-6-5 16:39:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	DMN2320UFB47B	Diodes	22+	3XFDFN	9000	原厂渠道,现货配单	询价
深圳兆威电子有限公司	DMN2320UFB4	DIODES/美台	22+	X2-DFN1006-3	90000	正规代理渠道假一赔十	询价
深圳市高捷芯城科技有限公司	DMN2310UWQ-7	DIODES(美台)	24+	SOT-323(SC-70)	7828	支持大陆交货,美金交易。原装现货库存。	询价
深圳市百诺芯科技有限公司	DMN2310U-13	DIODES/美台	23+	NA	12730	原装正品代理渠道价格优势	询价
深圳市金宏图电子科技有限公司	DMN2310U-7	Diodes Zetex	2025		9000	全新、原装	询价
深圳市粤骏腾电子科技有限公司	DMN2320UFB4	DIODES/美台	24+	X2-DSN1006-3	900000	原装进口特价	询价
艾睿国际（香港）有限公司	DMN2310U	DIODES/美台	2447	SOT23	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市南科功率半导体有限公司	DMN2310U-7	NK/南科功率	9420	SOT-23	36520	国产南科平替供应大量	询价
现代芯城（深圳）科技有限公司	DMN2310UTQ-13		24+	N/A	74000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市威尔健半导体有限公司	DMN2320UFB4-7B	DIODES/美台	23+	DFN1006-3	50000	全新原装正品现货,支持订货	询价