N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

丝印代码：H5；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

丝印代码：H5；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • PCB Footprint of 4mm2 • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Maximum Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMN2053UFDBQ is suitable for automotive applications requirin

丝印代码：H5；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • PCB Footprint of 4mm2 • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Maximum Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMN2053UFDBQ is suitable for automotive applications requirin

丝印代码：H5；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • PCB Footprint of 4mm2 • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Maximum Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMN2053UFDBQ is suitable for automotive applications requirin

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UQ is suitable for automotive applications requiring specific ch

丝印代码：AS2；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UQ is suitable for automotive applications requiring specific ch

丝印代码：AS2；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UQ is suitable for automotive applications requiring specific ch

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  Backlighting  DC-DC Converters  Power Management Functio

丝印代码：BR6；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  Backlighting  DC-DC Converters  Power Management Functio

丝印代码：BR6；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  Backlighting  DC-DC Converters  Power Management Functio

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UVTQ is suitable for automotive applications requiring specific

丝印代码：BR6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UVTQ is suitable for automotive applications requiring specific

丝印代码：BR6；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UVTQ is suitable for automotive applications requiring specific

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-

丝印代码：CI5；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-

丝印代码：CI5；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications requiring specific change control; this part is

丝印代码：CI5；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications requiring specific change control; this part is

丝印代码：CI5；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications requiring specific change control; this part is

N-Channel Enhancement Mode MOSFET

Application + Load/Power Switching + Interfacing Switching. * Logic Level Shift

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：513.159 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：513.159 Kbytes Page：7 Pages

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET

包装：卷带（TR） 描述：MOSFET 8V~24V SOT323 分立半导体产品 晶体管 - FET，MOSFET - 单个

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TRIPLE POWER-DISTRIBUTION SWITCHES

文件：434.95 Kbytes Page：25 Pages

TRIPLE POWER-DISTRIBUTION SWITCHES

文件：434.95 Kbytes Page：25 Pages