METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

Auto Wide, EDTV-II ID Detection, ID-1 Detection

Description The CXD2053AM/AS is an IC which has the three functions of identifying the wide video (auto wide), detecting the EDTV-II ID, and detecting ID-1 (EIAJ, CPX1024) from the video signal. Features • Video aspect ratio identification used with wide TVs is realized with a single chip. • I

Integrated Circuit 8-Bit MPU Compatible A/D Converter

Description: The NTE2053 is a CMOS 8–bit successive approximation Analog to Digital converter in a 20–Lead DIP type package which uses a differential potentiometric ladder – similar to the 256R products. This device is designed to allow operation with the NSC800 and INS8080A derivative control

TRIPLE POWER-DISTRIBUTION SWITCHES

文件：434.95 Kbytes Page：25 Pages

TRIPLE POWER-DISTRIBUTION SWITCHES

文件：434.95 Kbytes Page：25 Pages