型号 功能描述 生产厂家 企业 LOGO 操作
DMN2024U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

DIODES

美台半导体

DMN2024U

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change contr

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change contr

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

DIODES

美台半导体

N-channel Enhancement Mode Power MOSFET

Features * 20V,5A Roson

TECHPUBLIC

台舟电子

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

12 x Capacitive Touch Shield for Arduino - MPR121

o PCB Dimensions: 53mm x 68mm x 2mm / 2.1 x 2.7 x 0.08 o Height with Button: 5mm / 0.2

Adafruit

Digital Thermometers

Key Features and Benefits • Long battery life – typically 500 hours • Accurate performance – 0.2% of reading • Robust Case – Ensuring long life in demanding and harsh environments • Selectable auto switch‑off – saves on operational costs • Automatic zero calibration – for added accuracy

DIGITRON

High Voltage High Current Darlington Arrays

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At

ALLEGRO

Cypress Semiconductor

文件:61.27 Kbytes Page:1 Pages

XFMRS

Mounting brackets

文件:1.18215 Mbytes Page:1 Pages

MASCOT

更新时间:2025-12-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
10230
原装现货,当天可交货,原型号开票
DIODES/美台
25+
SOT23
38000
原装正品,假一罚十!
Diodes(美台)
2511
标准封装
12000
电子元器件采购降本30%!原厂直采,砍掉中间差价
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
Diodes Incorporated
25+
SOT-23-6 细型 TSOT-23-6
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
DIODES(美台)
24+
DFN2020-6
7863
支持大陆交货,美金交易。原装现货库存。
DiodesZetex
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES/美台
24+
SOT-23
9600
原装现货,优势供应,支持实单!

DMN2024U数据表相关新闻