型号 功能描述 生产厂家&企业 LOGO 操作
DMN2024U

N-CHANNELENHANCEMENTMODEMOSFET

FeaturesandBenefits •LowOn-Resistance •Low-InputCapacitance •FastSwitchingSpeed •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizethe

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

FeaturesandBenefits •LowOn-Resistance •Low-InputCapacitance •FastSwitchingSpeed •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizethe

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

FeaturesandBenefits •LowOn-Resistance •Low-InputCapacitance •FastSwitchingSpeed •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizethe

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,whichmakesit idealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits LowOn-Resistance LowInputCapacitance Fast

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,whichmakesit idealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits LowOn-Resistance LowInputCapacitance Fast

DIODES

Diodes Incorporated

DIODES

20VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,whichmakesit idealforhigh-efficiencypowermanagementapplications. Applications BatteryManagementApplication PowerManagementFunctions DC-DCConvert

DIODES

Diodes Incorporated

DIODES

20VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,whichmakesit idealforhigh-efficiencypowermanagementapplications. Applications BatteryManagementApplication PowerManagementFunctions DC-DCConvert

DIODES

Diodes Incorporated

DIODES

20VN-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,whichmakesit idealforhigh-efficiencypowermanagementapplications. Applications BatteryManagementApplication PowerManagementFunctions DC-DCConvert

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontr

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UQissuitableforautomotiveapplications requiringspecificchangec

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UQissuitableforautomotiveapplications requiringspecificchangec

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UQissuitableforautomotiveapplications requiringspecificchangec

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowOn-Resistance ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC-Q100/101/

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, whichmakesitidealforhigh-efficiencypowermanagement applications. Applications Backlighting DC-DCConverters PowerManagementFunctions F

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, whichmakesitidealforhigh-efficiencypowermanagement applications. Applications Backlighting DC-DCConverters PowerManagementFunctions F

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, whichmakesitidealforhigh-efficiencypowermanagement applications. Applications Backlighting DC-DCConverters PowerManagementFunctions F

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UVTQissuitableforautomotiveapplication

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UVTQissuitableforautomotiveapplication

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance Low-InputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2024UVTQissuitableforautomotiveapplication

DIODES

Diodes Incorporated

DIODES

HighVoltageHighCurrentDarlingtonArrays

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.At

ALLEGRO

Allegro MicroSystems

ALLEGRO

CypressSemiconductor

文件:61.27 Kbytes Page:1 Pages

XFMRS

XFMRS,Inc.

XFMRS

Band25Rx,Band26Rx,Band41RxTriplexer

文件:257.88 Kbytes Page:2 Pages

BOARDCOMBroadcom Corporation.

博通公司博通半导体

BOARDCOM

Singleantenna

文件:257.89 Kbytes Page:2 Pages

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AVAGO

Band25Rx,Band26Rx,Band41RxTriplexer

文件:257.88 Kbytes Page:2 Pages

BOARDCOMBroadcom Corporation.

博通公司博通半导体

BOARDCOM
更新时间:2025-5-13 17:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
1936+
UDFN20206
6852
只做原装正品现货或订货!假一赔十!
DIODES/美台
25+
SOT23
38000
原装正品,假一罚十!
DiodesZetex
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES(美台)
24+
DFN2020-6
7863
支持大陆交货,美金交易。原装现货库存。
DIODES/美台
24+
NA/
10230
原装现货,当天可交货,原型号开票
DIODES
24+
SOT-23-3
56000
公司进口原装现货 批量特价支持
Diodes(美台)
2021/2022+
标准封装
12000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

DMN2024U芯片相关品牌

  • AAO
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

DMN2024U数据表相关新闻