N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Convert

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change contr

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change contr

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions F

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UVTQ is suitable for automotive application

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET

12 x Capacitive Touch Shield for Arduino - MPR121

o PCB Dimensions: 53mm x 68mm x 2mm / 2.1 x 2.7 x 0.08 o Height with Button: 5mm / 0.2

Digital Thermometers

Key Features and Benefits • Long battery life – typically 500 hours • Accurate performance – 0.2% of reading • Robust Case – Ensuring long life in demanding and harsh environments • Selectable auto switch‑off – saves on operational costs • Automatic zero calibration – for added accuracy

High Voltage High Current Darlington Arrays

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At

Cypress Semiconductor

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Band 25 Rx, Band 26 Rx, Band 41 Rx Triplexer

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