N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance: RDS(on) = 550(max)mΩ @ VGS = 4.5V

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：194.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance: RDS(on) = 550(max)mΩ @ VGS = 4.5V

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：194.7 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：153.96 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：194.7 Kbytes Page：6 Pages

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

MOLDED-IN OR POTTED-IN INSERT, FLUSH MOUNTED BOTH SIDES

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Silicone Cover Stranded-Core Wire - 2m 30AWG Yellow

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Snap Bushings

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boxes and ancillary products

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