12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring spe

12V N-CHANNEL ENHANCEMENT MODE MOSFET

丝印代码：14；12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring spe

丝印代码：14；12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring spe

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

Low-power frequency synthesizer for mobile radio communications

GENERAL DESCRIPTION The UMA1014 is a low-power universal synthesizer which has been designed for use in channelized radio communication. The IC is manufactured in bipolar technology and is designed to operate at 5 to 100 kHz channel spacing with an RF input from 50 to 1100 MHz. The channel is p

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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QUAD PRECISION OPERATIONAL AMPLIFIERS

文件：631.06 Kbytes Page：30 Pages

QUAD PRECISION OPERATIONAL AMPLIFIERS

文件：631.06 Kbytes Page：30 Pages