Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020)

4.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2304 is a COMMON BASE transistor capable of providing 4 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

Video Filter

Video Filter KR Model 2304 Specifications Filter Type Video Lowpass Insertion Loss

High Speed Power Supplies

• Optimized for battery-powered device testing • Ultra-fast transient response to load changes • 5A continuous output • Pulse peak, average, and baseline current measurements • 100nA DC current sensitivity MODEL 2304A • 100W output (20V @ 5A) • Sinks up to 3A MODEL 2303 • 45W output (

High Speed Power Supplies

• Optimized for battery-powered device testing • Ultra-fast transient response to load changes • 5A continuous output • Pulse peak, average, and baseline current measurements • 100nA DC current sensitivity MODEL 2304A • 100W output (20V @ 5A) • Sinks up to 3A MODEL 2303 • 45W output (

2.5A竊?30V N-CHANNEL MOSFET

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