100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Appl

100V N-CHANNEL ENHANCEMENT MODE MOSFET

100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Appl

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Synchronous rectifiers  Backlighting  Power management functions  DC-DC converters Features