N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Features  Low RDS(ON) – Ensures on State Losses Are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 UIS (Avalanche) Rated  100 Rg Tested  Lead-Free Fini

N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Features  Low RDS(ON) – Ensures on State Losses Are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 UIS (Avalanche) Rated  100 Rg Tested  Lead-Free Fini

N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Features  Low RDS(ON) – Ensures on State Losses Are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 UIS (Avalanche) Rated  100 Rg Tested  Lead-Free Fini

MachFlex™, 21G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 2+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

Triple 3-Input NAND Gates

文件：93.48 Kbytes Page：4 Pages

Strain Relief Mounting Hole Punches

文件：130.259 Kbytes Page：1 Pages

Common Mode Inductors/EMI Filters

文件：89.06 Kbytes Page：1 Pages

UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer

文件：518.059 Kbytes Page：13 Pages