USB2.0 to 10/100M Fast Ethernet Controller

文件：57.78 Kbytes Page：2 Pages

Industrial-temperature USB2.0 to 10/100M Fast Ethernet Controller

文件：69.59 Kbytes Page：2 Pages

USB2.0 to 10/100M Fast Ethernet Controller

文件：447 Kbytes Page：71 Pages

USB2.0 to 10/100M Fast Ethernet Controller

USB2.0 to 10/100M Fast Ethernet Controller

文件：57.78 Kbytes Page：2 Pages

Industrial-temperature USB2.0 to 10/100M Fast Ethernet Controller

文件：69.59 Kbytes Page：2 Pages

USB2.0 to 10/100M Fast Ethernet Controller

文件：447 Kbytes Page：71 Pages

3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

Advanced Power MOSFET

文件：253.8 Kbytes Page：7 Pages