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IRF9620价格
参考价格：￥16.2266
型号：IRF9620 品牌：Vishay 备注：这里有IRF9620多少钱，2025年最近7天走势，今日出价，今日竞价，IRF9620批发/采购报价，IRF9620行情走势销售排行榜，IRF9620报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF9620 | 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r | Intersil |   | |
IRF9620 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d | IRF | | |
IRF9620 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技 | | |
IRF9620 | Power MOSFET 文件：281.92 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRF9620 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | |
IRF9620 | Power MOSFET 文件：159.69 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRF9620 | 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET | RENESAS 瑞萨 | | |
IRF9620 | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
IRF9620 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) | Infineon 英飞凌 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d | IRF | | ||
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Surface M | IRF | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Surface M | IRF | | ||
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (T | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：281.92 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：159.69 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：159.69 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：159.69 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket | BELDEN 百通 | | ||
Introduction to Knowles Precision Devices Applications RF amplifier LC Filters and Networks Broadband Wireless LAN Medical Devices Cordless and Cellular phones DR/Crystal Oscillator Microstrip line filters | KNOWLES 楼氏电子 | | ||
Introduction to Knowles Precision Devices Applications RF amplifier LC Filters and Networks Broadband Wireless LAN Medical Devices Cordless and Cellular phones DR/Crystal Oscillator Microstrip line filters | KNOWLES 楼氏电子 | | ||
LDPE Sheet Metal Plugs 文件：118.04 Kbytes Page：1 Pages | Heyco | | ||
RF amplifier 文件：213.9 Kbytes Page：2 Pages | JOHANSON | |
IRF9620产品属性
- 类型
描述
- 型号
IRF9620
- 功能描述
MOSFET P-Chan 200V 3.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
NA/ |
4071 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+/25+ |
200 |
原装正品现货库存价优 |
||||
INFINEON/英飞凌 |
25+ |
TO-220 |
45000 |
IR全新现货IRF9620PBF即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO 220 |
160936 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
18+ |
TO-220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY(威世) |
2024+ |
TO-220-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
VISHAY/威世 |
24+ |
TO-220- |
3800 |
大批量供应优势库存热卖 |
|||
VISHAY |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
IRF9620芯片相关品牌
IRF9620规格书下载地址
IRF9620参数引脚图相关
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- IRF9540STRLPBF
- IRF9540SPBF
- IRF9540PBF
- IRF9540NSTRRPBF-CUTTAPE
- IRF9540NSTRRPBF
- IRF9540NSTRLPBF
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- IRF9530STRLPBF
- IRF9530SPBF
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- IRF9530NSTRRPBF
- IRF9530NSTRLPBF-CUTTAPE
- IRF9530NSTRLPBF
- IRF9530NSPBF
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IRF9620数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRFB3607PBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
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