型号 功能描述 生产厂家 企业 LOGO 操作
DLP801RE

DLP801RE 0.8 WUXGA DMD

1 Features • 0.8-inch diagonal micromirror array – WUXGA (1920 × 1200) display resolution – 9.0-μm micromirror pitch – ±14.5° micromirror tilt (relative to flat surface) – Corner illumination • Supports high optical power density for highbrightness large venue displays – Up to 40W/cm2 tota

TI

德州仪器

DLP801RE

0.80 英寸 WUXGA ProAV DLP® 数字微镜器件 (DMD)

TI

德州仪器

DLP801RE 0.8 WUXGA DMD

1 Features • 0.8-inch diagonal micromirror array – WUXGA (1920 × 1200) display resolution – 9.0-μm micromirror pitch – ±14.5° micromirror tilt (relative to flat surface) – Corner illumination • Supports high optical power density for highbrightness large venue displays – Up to 40W/cm2 tota

TI

德州仪器

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NTE

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

更新时间:2026-3-14 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Texas Instruments
24+
355-CLGA(42.2x42.2)
38520
一级代理/放心采购
TI/德州仪器
24+
CLGA(FLS)
30000
代理原装现货,价格优势。
TI
22+
355CLGA (42.2x42.2)
9000
原厂渠道,现货配单
TI/德州仪器
23+
DLP-TYPEA.9355
9990
只有原装
TI/德州仪器
23+
DLP-TYPEA.9355
9990
正规渠道,只有原装!
TI/德州仪器
25+
DLP-TYPEA.9-355
860000
明嘉莱只做原装正品现货
TI/德州仪器
23+
DLP-TYPEA.9355
5000
TI原厂原装全系列订货假一赔十
TI/德州仪器
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TI(德州仪器)
25+
CLGA-355(42.2x42.2)
500000
源自原厂成本,高价回收工厂呆滞
TI
16+
DLP
10000
原装正品

DLP801RE数据表相关新闻