750V/75A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss They are designed for the applications such as solar power and EV PTC. Features  Low VCE(sat) IGBT technology  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & so

750V/75A IGBT with SIC Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) wit

750V/75A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power. Features  Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) wit

RECTIFIER MODULE

Features Low reverse leakage curren t High surge current capabili ty Compliant to RoHS directive 2011/65/EU