General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss They are designed for the applications such as solar power and EV PTC.

Features

 Low VCE(sat) IGBT technology

 Maximum junction temperature 175oC

 VCE(sat) with positive temperature coefficient

 Fast & soft reverse recovery anti-parallel FWD

Typical Applications

 Solar power

 UPS

 EV PTC