Low-Power, High-Speed CMOS Analog Switches

DESCRIPTION The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining high speed (tON: 100 ns, typ) with low power consumption make the DG401B series ideal for portable and battery powered

Low-Power, High-Speed CMOS Analog Switches

文件：172.72 Kbytes Page：14 Pages

Low-Power, High-Speed CMOS Analog Switches

DESCRIPTION The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining high speed (tON: 100 ns, typ) with low power consumption make the DG401B series ideal for portable and battery powered

Low-Power, High-Speed CMOS Analog Switches

DESCRIPTION The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining high speed (tON: 100 ns, typ) with low power consumption make the DG401B series ideal for portable and battery powered

Low-Power, High-Speed CMOS Analog Switches

DESCRIPTION The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining high speed (tON: 100 ns, typ) with low power consumption make the DG401B series ideal for portable and battery powered

Low-Power, High-Speed CMOS Analog Switches

文件：172.72 Kbytes Page：14 Pages

Low-Power, High-Speed CMOS Analog Switches

文件：172.72 Kbytes Page：14 Pages

Low-Power, High-Speed CMOS Analog Switches

文件：172.72 Kbytes Page：14 Pages

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

文件：22.71 Kbytes Page：2 Pages