Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOT Analog Switch

DESCRIPTION The DG3001, DG3002, DG3003 are monolithic CMOS analog switches designed for high performance switching of analog signals. The DG3001 and DG3002 are configured as SPST switches, and the DG3003 is an SPDT switch. Combining low power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resist

Low-Voltage Sub-廓 SPST/SPDT MICRO FOOT짰 Analog Switch

FEATURES • MICRO FOOT chip scale package (1 mm x 1.5 mm) • Low voltage operation (1.8 V to 5.5 V) • Low on-resistance - RDS(on): 0.4 Ω • Fast switching - tON : 47 ns, tOFF: 40 ns • Low power consumption • TTL/CMOS compatible BENEFITS • Reduced power consumption • Simple logic interface

Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOT® Analog Switch

DESCRIPTION The DG3001, DG3002, DG3003 are monolithic CMOS analog switches designed for high performance switching of analog signals. The DG3001 and DG3002 are configured as SPST switches, and the DG3003 is an SPDT switch. Combining low power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resist

Low-Voltage Sub-廓 SPST/SPDT MICRO FOOT짰 Analog Switch

FEATURES • MICRO FOOT chip scale package (1 mm x 1.5 mm) • Low voltage operation (1.8 V to 5.5 V) • Low on-resistance - RDS(on): 0.4 Ω • Fast switching - tON : 47 ns, tOFF: 40 ns • Low power consumption • TTL/CMOS compatible BENEFITS • Reduced power consumption • Simple logic interface

Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOT® Analog Switch

DESCRIPTION The DG3001, DG3002, DG3003 are monolithic CMOS analog switches designed for high performance switching of analog signals. The DG3001 and DG3002 are configured as SPST switches, and the DG3003 is an SPDT switch. Combining low power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resist

Low-Voltage Sub-ohm SPST/SPDT MICRO FOOT Analog Switch

文件：193.71 Kbytes Page：12 Pages

Low-Voltage Sub-ohm SPST/SPDT MICRO FOOT Analog Switch

文件：193.71 Kbytes Page：12 Pages

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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