Low-Voltage Single SPDT Analog Switch

DESCRIPTION The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and small physical size (SC70), the DG2012 is ideal for portabl

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes Page：9 Pages

Low-Vaoltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch

DESCRIPTION The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and small physical size (SC70), the DG2012 is ideal for portabl

Powered-off Protection, 1 ?? 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

FEATURES • Low switch on-resistance (1 ) • 1.65 V to 5.5 V single supply operation • Isolation in powered-off mode • Control logic inputs can go over V+ • Low charge injection (5 pC) • Low total harmonic distortion • Break before make switching • Latch-up performance exceeds 300 mA per JE

Powered-off Protection, 1 Ω, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

The DG2012E is a high performance single-pole, double-throw (SPDT) analog switch designed for 1.8 V to 5.5 V operation with a single power rail. Fabricated with high density CMOS technology, the device achieves low on resistance of 1 Ω at a 5 V \nLow switch on-resistance (1 Ω)\n1.65 V to 5.5 V sin;

Powered-off Protection, 1 ?? 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

FEATURES • Low switch on-resistance (1 ) • 1.65 V to 5.5 V single supply operation • Isolation in powered-off mode • Control logic inputs can go over V+ • Low charge injection (5 pC) • Low total harmonic distortion • Break before make switching • Latch-up performance exceeds 300 mA per JE

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes Page：9 Pages

QUAD SPST CMOS ANALOG SWITCHES

文件：27.61 Kbytes Page：4 Pages

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes Page：9 Pages

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes Page：9 Pages

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT