FEATURES

• Low switch on-resistance (1 )

• 1.65 V to 5.5 V single supply operation

• Isolation in powered-off mode

• Control logic inputs can go over V+

• Low charge injection (5 pC)

• Low total harmonic distortion

• Break before make switching

• Latch-up performance exceeds 300 mA per JESD 78

• ESD tested

- 7000 V human body model (JS-001)

- 1000 V charge device model (JS-002)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Smartphones and tablets

• Consumer and computing

• Portable instrumentation

• Medical equipment

DESCRIPTION

The DG2012E is a high performance single-pole,

double-throw (SPDT) analog switch designed for 1.8 V to

5.5 V operation with a single power rail.

Fabricated with high density CMOS technology, the device

achieves low on resistance of 1  at a 5 V power supply, low

power consumption, and fast switching speeds. 

The DG2012E can handle both analog and digital signals

and permits signals with amplitudes of up to V+ to be

transmitted in either direction. Its control logic inputs can go

over V+ up to 5.5 V. It features break before make switching

performance. Its -3 dB bandwidth is typically 160 MHz.

A powered-off protection circuit is built into the switch to

prevent an abnormal current flow from COM pin to V+ during

the power-down condition. Each output pin can withstand

greater than 7 kV (human body model). 

Operation temperature is specified from -40 °C to +85 °C.

The DG2012E is available in SC-70-6L package.