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DG181晶体管资料

  • DG1815别名:DG1815三极管、DG1815晶体管、DG1815晶体三极管

  • DG1815生产厂家:中国大陆半导体企业

  • DG1815制作材料

  • DG1815性质:射频/高频放大 (HF)_宽频带放大 (A)

  • DG1815封装形式:直插封装

  • DG1815极限工作电压:60V

  • DG1815最大电流允许值:0.15A

  • DG1815最大工作频率:<1MHZ或未知

  • DG1815引脚数:3

  • DG1815最大耗散功率:0.4W

  • DG1815放大倍数

  • DG1815图片代号:A-11

  • DG1815vtest:60

  • DG1815htest:999900

  • DG1815atest:0.15

  • DG1815wtest:0.4

  • DG1815代换 DG1815用什么型号代替:2SC1815,

DG181价格

参考价格:¥326.7957

型号:DG181BA 品牌:All American Misc. 备注:这里有DG181多少钱,2026年最近7天走势,今日出价,今日竞价,DG181批发/采购报价,DG181行情走势销售排行榜,DG181报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DG181

Analog Switches and Multiplexers

Analog Switches with Dviver

INTERSIL

DG181

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

DG181

High-Speed Drivers with Dual SPST JFET Switches

DESCRIPTION The DG180/181/182 are precision dual single-pole, single-throw (SPST) analog switches designed to provide accurate switching of video and audio signals. This series is ideally suited for applications requiring a constant on-resistance over the entire analog range. FEATURES ● Constan

VISHAYVishay Siliconix

威世威世科技公司

DG181

High-Speed Drivers with Dual SPST JFET Switches

features  Constant On-Resistance Over Entire Analog Range  Low Leakage  Low Crosstalk  Rad Hardness benefits  Low Distortion  Eliminates Large Signal Errors  High Precision  High Bandwidth Capability  Fault Protection applications  Audio Switching  Video Switching  S

VISHAYVishay Siliconix

威世威世科技公司

DG181

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

DG181

High-Speed Drivers with JFET Switch

RENESAS

瑞萨

High-Speed Drivers with JFET Switch

Description\nThe DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors (JFET) designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the ON-OFF state of each switch. The driver is design • Constant ON-Resistance for Signals to ±10V (DG182, DG185, DG188, DG191), to ±7.5V (All Devices)\n• ±15V Power Supplies\n• <2nA Leakage from Signal Channel in Both ON and OFF States\n• TTL, DTL, RTL Direct Drive Compatibility\n• tON, tOFF <150ns, Break-Before-Make Action\n• Cross-Talk and Open Swit;

RENESAS

瑞萨

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

High-Speed Drivers with JFET Switch

Analog Switches with Dviver

INTERSIL

网络变压器

JWD

经纬达科技

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

PHILIPS

飞利浦

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

VISHAYVishay Siliconix

威世威世科技公司

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

ONSEMI

安森美半导体

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

MOTOROLA

摩托罗拉

DG181产品属性

  • 类型

    描述

  • Number Of Ports:

    Single

  • Speed:

    100/1000Base-T

  • Package:

    DIP

  • Package Length (mm):

    16.80

  • Package Width (mm):

    8.30

  • Package Height (mm):

    10.30

  • Temperature (℃):

    0 to 70

  • PoE Rating:

    NON-PoE

更新时间:2026-8-1 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SILICON
24+
CAN10
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
HARRIS
9722+
DIP14
111
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HAR
24+
CAN-8
8500
只做原装正品假一赔十为客户做到零风险!!
SIL
26+
标准封装
890000
一级总代理商原厂原装大批量现货 一站式服务
25+
DIP
2700
全新原装自家现货优势!
HAR
23+
65480
SILICONIX
25+
NA
62
专做原装正品,假一罚百!
VISHAY
23+
CAN10
2186
进口原装正品,价格优惠,销售一系列芯片
N/A
23+
NA
44
24+
DIP
1

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