型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

N-Channel MOSFET Transistor

文件:335.82 Kbytes Page:2 Pages

ISC

无锡固电

SMPS MOSFET

文件:3.72818 Mbytes Page:10 Pages

KERSEMI

N-Channel MOSFET Transistor

文件:335.82 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2025-11-1 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
10391
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IR
2016+
TO252
5623
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IR
24+
TO-252
80000
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INFINEON/英飞凌
25+
TO-252
54648
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IR
22+
SOT-252
100000
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24+
TO-252
159978
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12+
TO-252
145
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IR
23+
SOT-252
65400
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25+
25000
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INFINEON
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TO-252
20000
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