N-CHANNEL ENHANCEMENT MODE MOSFET

General Description DG12N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

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