Single Phase2.0 AMP. Glass Passivated Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique ◇ High surge current capability ◇ High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs., ( 2.3 kg ) tension ◇ Small size, simpl

Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to I

Single Phase 2.0AMPS. Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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封装/外壳：4-DIP（0.300"，7.62mm） 包装：散装 描述：BRIDGE RECT 1PHASE 600V 2A DBL 分立半导体产品 二极管 - 桥式整流器

2A, 600V, Standard Bridge Rectifier

2A, 50V - 1400V Glass Passivated Bridge Rectifiers

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封装/外壳：4-DIP（0.300"，7.62mm） 包装：散装 描述：BRIDGE RECT 1PHASE 600V 2A DBL 分立半导体产品 二极管 - 桥式整流器

2A, 600V, Standard Bridge Rectifier

2A, 400V - 1000V Glass Passivated Bridge Rectifiers

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2A, 400V - 1000V Glass Passivated Bridge Rectifiers

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.