Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

Voltage Range 50 to 1000 Volts Current 1.5 Amperes Features • UL Recognized File # E-96005 • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • High temperature sol

1.5A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • Low leakage • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds 0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension • RoHS compliant

Silicon Bridge Rectifier

Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • Small size, simple installation • Types from 50 V up to 400 V VRRM • Not ESD Sensitive

BRIDGE RECTIFIERS

Features • Types up to 1000V VRRM • Ideal for printed circuit board • High surge current capability • High temperature soldering guaranteed: 250°C / 10 seconds • Small size, simple installation

Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Features • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs., ( 2.3 kg ) tension • Small size, simple installati

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * High surge current capability * Polarity: marked on body * Mounting position: Any * Weight: 1.0 grams * Both normal and Pb free product are available: * Normal:80~95Sn,5~20Pb *

Single Phase Glass Passivated Silicon Bridge Rectifier

文件：602.16 Kbytes Page：3 Pages

Single Phase Glass Passivated Silicon Bridge Rectifier

文件：329.66 Kbytes Page：3 Pages

1.5 Amps Glass passivated Bridge Rectifiers

文件：1.7933 Mbytes Page：3 Pages

封装/外壳：4-EDIP（0.321"，8.15mm） 包装：散装 描述：BRIDGE RECT 1PHASE 50V 1.5A DB 分立半导体产品 二极管 - 桥式整流器

Bridge Rectifiers

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * High surge current capability * Polarity: marked on body * Mounting position: Any * Weight: 1.0 grams * Both normal and Pb free product are available: * Normal:80~95Sn,5~20Pb *

Single Phase Glass Passivated Silicon Bridge Rectifier

文件：329.66 Kbytes Page：3 Pages

Single Phase Glass Passivated Silicon Bridge Rectifier

文件：602.16 Kbytes Page：3 Pages

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

文件：150.04 Kbytes Page：2 Pages

桥式整流器

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

文件：150.04 Kbytes Page：2 Pages

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

文件：40.94 Kbytes Page：2 Pages