Netz-Gleichrichterdiode Rectifier Diode

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Netz-Gleichrichterdiode Rectifier Diode

Rectifier Diodes

\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

Rectifier Diodes

\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

封装/外壳：DO-200AA，A-PUK 包装：散装 描述：DIODE GEN PURP 1.4KV 770A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-200AA，A-PUK 包装：散装 描述：DIODE GEN PURP 1.6KV 770A 分立半导体产品 二极管 - 整流器 - 单

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th