型号 功能描述 生产厂家 企业 LOGO 操作

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent

STMICROELECTRONICS

意法半导体

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

MICROSEMI

美高森美

Capacitive Sensor Switch Control IC

文件:698.67 Kbytes Page:17 Pages

ROHM

罗姆

GaN Doherty Hybrid Amplifier

文件:482.78 Kbytes Page:4 Pages

RFHIC

D21008-GB产品属性

  • 类型

    描述

  • 型号

    D21008-GB

  • 制造商

    BLACK & DECKER

  • 功能描述

    DRILL 230V

更新时间:2026-3-15 8:38:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
23+
M243
12700
买原装认准中赛美
ST
24+
122
现货供应
ST/意法
25+
PowerSO-10RF
10000
全新原装现货库存
ST/意法半导体
24+
M243
16900
原装现货,实单价优
STMICRO
25+
N/A
18746
样件支持,可原厂排单订货!
ST
SMD
22+
10000
终端免费提供样品 可开13%增值税发票
ST/意法半导体
25
M243
6000
原装正品
STMICRO
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
23+
PowerSO-10RF
50000
只做原装正品
ST/意法
2517+
PowerSO-10RF
8850
只做原装正品现货或订货假一赔十!

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