GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

封装/外壳：2-SMD，扁平引线 包装：托盘 描述：GAAS TVAR NON HERMETIC MICROSTRI 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：模具 包装：托盘 描述：GAAS TVAR HERMETIC PILL 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent

Capacitive Sensor Switch Control IC

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GaN Doherty Hybrid Amplifier

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