Single & Dual Output Miniature, 1W SIP DC/DC Converters

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Rugged lead free vitreous enamel coating

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SILICON PLANAR EPITAXIAL TRANSISTORS

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D COMPACT ENCLOSED SWITCH

Features •High precision and long life. •Suitable for applications demanding higher mechanical strength, •Gasket diaphragm seal provides high environmental resistance.

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to

GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations APPLICATION • 40 to 1000 MHz CATV amplifie

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excelle

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excell

GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module with high output capability employing GaAs die FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations • High output c

GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations APPLICATION • 40 to 1000 MHz CATV amplifie

Product Specification

[RFMD] GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040180GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excelle

GaAs Power Doubler Hybrid 40MHz to 1000MHz

Product Description The D10040200GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ◾ Excellent Linearity ◾ Superi

GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module with high output capability employing GaAs dice FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminatio

GaAs Power Doubler, 40 - 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module employing GaAs die FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations APPLICATION • 40 to 1000 MHz CATV amplifie

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040220GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excelle

GaAs Power Doubler, 40 - 1000MHz, 22.5dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC

DESCRIPTION • Hybrid Power Doubler amplifier module with high output capability employing GaAs dice FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Low noise • Unconditionally stable under all terminations • High output

GaAs Power Doubler Hybrid 40MHz to 1000MHz

GaAs Power Doubler Hybrid 40MHz to 1000MHz The D10040220GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excell

Hybrid Power Doubler amplifier module

DESCRIPTION • Hybrid Power Doubler amplifier module with Extremely high output capability employing GaAs dice FEATURES • Excellent linearity • Superior return loss performance • Extremely low distortion • Optimal reliability • Extremely low noise • Unconditionally stable under all terminat

METAL GATE RF SILICON FET

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 8 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Low Cost, 1W SIP Single & Dual Output DC/DC Converters

Low Cost, 1W SIP Single & Dual Output DC/DC Converters Key Features: •1W Output Power •Miniature SIP Case •UL Approved (File E245422) •Single & Dual Outputs •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models • LOWEST COST!!

Fast Switching EmCon Diode

Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com

Very Low Cost, 1W SIP Dual Isolated Output DC/DC Converters

Very Low Cost, 1W SIP Dual Isolated Output DC/DC Converters Key Features: •1W Output Power •Miniature SIP Case •UL Approved (File E245422) •Dual Isolated Outputs •1,000 VDC Isolation •>3.5 MHour MTBF •12 Standard Models •Industry Standard Pin-Out • LOWEST COST!!

Low Cost, Miniature SIP 1W, Very High Isolation DC/DC Converters

Low Cost, Miniature SIP 1W, Very High Isolation DC/DC Converters Key Features: •1W Output Power •6,000 VDC Isolation •7 Pin SIP Case •5V and 12V Inputs •Single & Dual Outputs •16 Standard Models •3.5 MH MTBF • LOWEST COST!!

Low Cost, 1W SIP High Isolation DC/DC Converters

Low Cost, 1W High Isolation SIP DC/DC Converters Key Features: ● 1W Output Power ● 3,000 VDC Isolation ● Miniature SIP Case ● Single & Dual Outputs ● >1 MHour MTBF ● 24 Standard Models ● LOWEST COST!!

Low Cost, 1W SIP Tightly Regulated DC/DC Con vert ers

Low Cost, 1W SIP Tightly Regulated DC/DC Converters Key Features: •1W Output Power •Tightly Regulated •Single & Dual Outputs •Miniature SIP Case •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models •Industry Standard Pin-Out •LOWEST COST!!

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters Key Features: •1W Output Power •2:1 Input Voltage Range •1,500 VDC Isolation •Short Circuit Protected •Miniature SIP Case •Single & Dual Outputs •1.0 MH MTBF •Industry Standard Pin-Out • Low Low Cost!!

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

Rugged lead free vitreous enamel coating

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包装：散装 描述：D100-19X=WILMAR DIFFERENTIAL 1 工业自动化与控制 保护继电器和系统

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

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Gold metallised multi-purpose silicon DMOS RF FET

旋转位置传感器

Gold metallised multi-purpose silicon DMOS RF FET

METAL GATE RF SILICON FET

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WILMAR??Protective Relays-D100X Series, Close Differential

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METAL GATE RF SILICON FET

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包装：散装 描述：1 TO 4 SPLITTER CABLE 电缆组件 套管 - 音频电缆

14mm Series Metal Oxide Varistors

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz

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GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs Power Doubler Hybrid 40MHz to 1000MHz

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GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz

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