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D100晶体管资料

D100别名：D100三极管、D100晶体管、D100晶体三极管
D100生产厂家：印度大陆器件公司
D100制作材料：Si-NPN
D100性质：射频/高频放大（HF）
D100封装形式：直插封装
D100极限工作电压：50V
D100最大电流允许值：1A
D100最大工作频率：80MHZ
D100引脚数：4
D100最大耗散功率：0.5W
D100放大倍数：
D100图片代号：C-11
D100vtest：50
D100htest：80000000
D100atest：1
D100wtest：0.5

D100代换 D100用什么型号代替：

D100价格

参考价格：￥44.3866

型号：D10033 品牌：Honeywell 备注：这里有D100多少钱，2025年最近7天走势，今日出价，今日竞价，D100批发/采购报价，D100行情走势销售排行榜，D100报价。

型号	功能描述	生产厂家&企业	LOGO
D100	Single&DualOutputMiniature,1WSIPDC/DCConverters 文件：200.56 Kbytes Page：2 Pages	MPD MPD (Memory Protection Devices)
D100	SILICONPLANAREPITAXIALTRANSISTORS 文件：88.54 Kbytes Page：4 Pages	CDIL Continental Device India Limited
D100	Ruggedleadfreevitreousenamelcoating 文件：261.94 Kbytes Page：2 Pages	OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司
D1000	DCOMPACTENCLOSEDSWITCH Features •Highprecisionandlonglife. •Suitableforapplicationsdemandinghighermechanical strength, •Gasketdiaphragmsealprovideshighenvironmental resistance.	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
D1001UK	GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET20W-28V-175MHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–16dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto175MHz	SEME-LAB Seme LAB
D1002UK	METALGATERFSILICONFET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET40W–28V–175MHzSINGLEENDED FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–16dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto	SEME-LAB Seme LAB
D10040180GT	GaAsPowerDoubler,40-1000MHz,19.0dBmin.Gain@1GHz,375mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermoduleemployingGaAsdie FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminations APPLICATION •40to1000MHzCATVamplifie	PDI PREMIER DEVICES, INC.
D10040180GT	GaAsPowerDoublerHybrid40MHzto1000MHz GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040180GTisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■Excelle	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040180GTH	GaAsPowerDoublerHybrid40MHzto1000MHz GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040180GTHisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■Excell	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040180GTH	GaAsPowerDoubler,40-1000MHz,19.0dBmin.Gain@1GHz,440mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermodulewithhighoutputcapabilityemployingGaAsdie FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminations •Highoutputc	PDI PREMIER DEVICES, INC.
D10040200GT	GaAsPowerDoubler,40-1000MHz,20.0dBmin.Gain@1GHz,375mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermoduleemployingGaAsdie FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminations APPLICATION •40to1000MHzCATVamplifie	PDI PREMIER DEVICES, INC.
D10040200GT	ProductSpecification [RFMD] GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040180GTisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
D10040200GT	GaAsPowerDoublerHybrid40MHzto1000MHz GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040180GTisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■Excelle	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040200GTH	GaAsPowerDoublerHybrid40MHzto1000MHz ProductDescription TheD10040200GTHisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ◾ExcellentLinearity ◾Superi	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040200GTH	GaAsPowerDoubler,40-1000MHz,20.0dBmin.Gain@1GHz,High,440mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermodulewithhighoutputcapabilityemployingGaAsdice FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminatio	PDI PREMIER DEVICES, INC.
D10040220GT	GaAsPowerDoubler,40-1000MHz,22.5dBmin.Gain@1GHz,375mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermoduleemployingGaAsdie FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminations APPLICATION •40to1000MHzCATVamplifie	PDI PREMIER DEVICES, INC.
D10040220GT	GaAsPowerDoublerHybrid40MHzto1000MHz GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040220GTisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■Excelle	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040220GTH	GaAsPowerDoubler,40-1000MHz,22.5dBmin.Gain@1GHz,High,440mAmax.@24VDC DESCRIPTION •HybridPowerDoubleramplifiermodulewithhighoutputcapabilityemployingGaAsdice FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Lownoise •Unconditionallystableunderallterminations •Highoutput	PDI PREMIER DEVICES, INC.
D10040220GTH	GaAsPowerDoublerHybrid40MHzto1000MHz GaAsPowerDoublerHybrid40MHzto1000MHz TheD10040220GTHisaHybridPowerDoubleramplifiermodule.ThepartemploysGaAsdieandisoperatedfrom40MHzto1000MHz.Itprovidesexcellentlinearityandsuperiorreturnlossperformancewithlownoiseandoptimalreliability. Features ■Excell	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040230P1	HybridPowerDoubleramplifiermodule DESCRIPTION •HybridPowerDoubleramplifiermodulewithExtremelyhighoutputcapabilityemployingGaAsdice FEATURES •Excellentlinearity •Superiorreturnlossperformance •Extremelylowdistortion •Optimalreliability •Extremelylownoise •Unconditionallystableunderallterminat	PDI PREMIER DEVICES, INC.
D1008UK	METALGATERFSILICONFET FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto500MHz	SEME-LAB Seme LAB
D1009UK	METALGATERFSILICONFET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET150W–28V–500MHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •LOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–8dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfrom1MHzto500	SEME-LAB Seme LAB
D100D20C0GH63L6R	DSeries FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100D20COGH63L6R	DSeries FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100E	LowCost,1WSIPSingle&DualOutputDC/DCConverters LowCost,1WSIPSingle&DualOutputDC/DCConverters KeyFeatures: •1WOutputPower •MiniatureSIPCase •ULApproved(FileE245422) •Single&DualOutputs •1,000VDCIsolation •>3.5MHourMTBF •24StandardModels •LOWESTCOST!!	MPD MPD (Memory Protection Devices)
D100E60	FastSwitchingEmConDiode Features: •600VEmContechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltage •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
D100ED	VeryLowCost,1WSIPDualIsolatedOutputDC/DCConverters VeryLowCost,1WSIPDualIsolatedOutputDC/DCConverters KeyFeatures: •1WOutputPower •MiniatureSIPCase •ULApproved(FileE245422) •DualIsolatedOutputs •1,000VDCIsolation •>3.5MHourMTBF •12StandardModels •IndustryStandardPin-Out •LOWESTCOST!!	MPD MPD (Memory Protection Devices)
D100EHI	LowCost,MiniatureSIP1W,VeryHighIsolationDC/DCConverters LowCost,MiniatureSIP1W,VeryHighIsolationDC/DCConverters KeyFeatures: •1WOutputPower •6,000VDCIsolation •7PinSIPCase •5Vand12VInputs •Single&DualOutputs •16StandardModels •3.5MHMTBF •LOWESTCOST!!	MPD MPD (Memory Protection Devices)
D100EI	LowCost,1WSIPHighIsolationDC/DCConverters LowCost,1WHighIsolationSIPDC/DCConverters KeyFeatures: ●1WOutputPower ●3,000VDCIsolation ●MiniatureSIPCase ●Single&DualOutputs ●>1MHourMTBF ●24StandardModels ●LOWESTCOST!!	MPD MPD (Memory Protection Devices)
D100ER	LowCost,1WSIPTightlyRegulatedDC/DCConverters LowCost,1WSIPTightlyRegulatedDC/DCConverters KeyFeatures: •1WOutputPower •TightlyRegulated •Single&DualOutputs •MiniatureSIPCase •1,000VDCIsolation •>3.5MHourMTBF •24StandardModels •IndustryStandardPin-Out •LOWESTCOST!!	MPD MPD (Memory Protection Devices)
D100ERW	LowCost,Miniature1WSIP,WideInputDC/DCConverters LowCost,Miniature1WSIP,WideInputDC/DCConverters KeyFeatures: •1WOutputPower •2:1InputVoltageRange •1,500VDCIsolation •ShortCircuitProtected •MiniatureSIPCase •Single&DualOutputs •1.0MHMTBF •IndustryStandardPin-Out •LowLowCost!!	MPD MPD (Memory Protection Devices)
D100J20C0GH6.J5R	DSeries FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100J20C0GH6.J5R	CeramicDiscCapacitorsClass1and2,100VDC,GeneralPurpose FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100J20C0GH6.J5R	CeramicDiscCapacitorsClass1and2,100VDC,GeneralPurpose FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100J20C0GH6.L2R	CeramicDiscCapacitorsClass1and2,100VDC,GeneralPurpose FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100J20C0GH6.L2R	DSeries FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100J20C0GH6.L2R	CeramicDiscCapacitorsClass1and2,100VDC,GeneralPurpose FEATURES •Lowlosses •Highstability •Highcapacitanceinsmallsize •Kinked(preferred)orstraightleads •ComplianttoRoHSdirective2002/95/EC APPLICATIONS •Bypassing •Coupling •Resonantcircuit	VishayVishay Siliconix 威世科技威世科技半导体
D100N03L	N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
D100N03L-1	N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
D100NH02L	N-channel24V-0.0042ohm-60A-DPAK-IPAKSTripFETTMIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
D1000	Ruggedleadfreevitreousenamelcoating 文件：261.94 Kbytes Page：2 Pages	OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司
D100-19X	包装：散装描述：D100-19X=WILMAR DIFFERENTIAL 1 工业自动化与控制保护继电器和系统	ETC 知名厂家	ETC
D10020U2JH6	CeramicSinglelayerDCDiscCapacitorsForGeneralPurposeClass1,Class2andClass3,50VDC,100VDC,500VDC 文件：123.29 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半导体
D1003UK	METALGATERFSILICONFET 文件：39.78 Kbytes Page：4 Pages	SEME-LAB Seme LAB
D100-3X	WILMAR??ProtectiveRelays-D100XSeries,CloseDifferential 文件：58.27 Kbytes Page：1 Pages	MACOMTyco Electronics 玛科姆技术方案控股有限公司
D1004	METALGATERFSILICONFET 文件：35.51 Kbytes Page：4 Pages	SEME-LAB Seme LAB
D1004	包装：散装描述：1 TO 4 SPLITTER CABLE 电缆组件套管 - 音频电缆	ETC 知名厂家	ETC
D10040-000	14mmSeriesMetalOxideVaristors 文件：607.54 Kbytes Page：11 Pages	MACOMTyco Electronics 玛科姆技术方案控股有限公司
D10040180GT	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：228.31 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040180GTH	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：264.95 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040200GT	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：265.01 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040200GTH	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：265.17 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040200PH1	GaAs/GaNPowerDoublerHybrid45MHzto1000MHz 文件：265.88 Kbytes Page：3 Pages	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040200PL1	GaAs/GaNPowerDoublerHybrid45MHzto1000MHz 文件：266.14 Kbytes Page：3 Pages	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040220GT	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：265.24 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040220GTH	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：265.14 Kbytes Page：3 Pages	QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司
D10040230PH1	GaAs/GaNPowerDoublerHybrid45MHzto1000MHz 文件：266.18 Kbytes Page：3 Pages	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040230PL1	GaAs/GaNPowerDoublerHybrid45MHzto1000MHz 文件：266.36 Kbytes Page：3 Pages	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040240GT	GaAsPowerDoublerHybrid40MHzto1000MHz 文件：264.66 Kbytes Page：3 Pages	RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司
D10040240GT	GaAsPowerDoubler,40-1000MHz,24.0dBmin.Gain@1GHz,375mAmax.@24VDC 文件：126.95 Kbytes Page：4 Pages	PDI PREMIER DEVICES, INC.

D100产品属性

类型
描述
型号
D100
制造商
Apex Tool Group
功能描述
Die Set; 22 to 10 AWG; Steel; 18 in.(Case Pack); 13 in.(Case Pack)
制造商
Cooper Hand Tools/Xcelite
功能描述
CRIMP DIE SET; Body
Material
Precision-machined hardened steel ; Crimp
Application
Insulated Terminals; Crimp
Size
22AWG to 10AWG; For Use
With
ErgoCrimp Plus Tool;
Material
Steel;
Series
ErgoCrimp ;RoHS
Compliant
NA

D100供应商更多...

更新时间：2025-8-4 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	D100G20U2JL6UJ5R	VISHAY(威世)	24+	插件,P=5mm	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	D100E60	IN	24+	NA/	17068	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	D100N03M	SYFOREVER	25+	TO-252	20300	SYFOREVER原装特价D100N03M即刻询购立享优惠#长期有货	询价
深圳市纳艾斯科技有限公司	D100J20C0GH6UL5R	VISHAY	24+	2000PCS	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市能元时代电子有限公司	D1007	POINT NINE	24+	原装原封	25000	##公司100%原装现货,假一罚十!可含税13%免费提供样品支持	询价
深圳市禾兴威科技有限公司	D1007UK		23+	NA	6800	原装正品,力挺实单	询价
深圳市科芯源微电子有限公司	D100N03ZA	VB	25+	TO-252	10000	原装正品,假一罚十!	询价
深圳市华睿芯科技有限公司	D10040200GTH	Qorvo	24+	SOT-115J	3280	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市科恒伟业电子有限公司	D10040270GTH	QORVO	21+	SMD	6500	只做原装正品假一赔十!正规渠道订货!	询价
深圳市昂芯微科技有限公司	D10040180GT	RFMD	23+	N/A	7560	原厂原装	询价

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