METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 8 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500

Gold metallised multi-purpose silicon DMOS RF FET

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Integrated Circuit AF Power Amplifier, 1W

Integrated Circuit AF Power Amplifier, 1W

HIGH-SIDE CURRENT MONITOR

DESCRIPTION The ZXCT1009 is a high side current sense monitor. Using this device eliminates the need to disrupt the ground plane when sensing a load current. It takes a high side voltage developed across a current shunt resistor and translates it into a proportional output current. A user

Reflective Photosensor

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