DESCRIPTION

The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems.

NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• LOW NOISE FIGURE & HIGH ASSOCIATED GAIN:

NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz

• 6 PIN SUPER MINIMOLD PACKAGE

• GATE WIDTH: Wg = 200µm