CY7C1351价格

参考价格:¥25.9660

型号:CY7C1351G-100AXC 品牌:Cynergy 3 备注:这里有CY7C1351多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1351批发/采购报价,CY7C1351行情走势销售排行榜,CY7C1351报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1351

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1351

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1351

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Infineon

英飞凌

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture

Infineon

英飞凌

4-Mbit (128 K 횞 36) Flow-Through SRAM with NoBL??Architecture

文件:550.32 Kbytes Page:20 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128 K x 36) Flow-Through SRAM with NoBL??Architecture

文件:567.3 Kbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:卷带(TR)剪切带(CT) 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128 K 횞 36) Flow-Through SRAM with NoBL??Architecture

文件:550.32 Kbytes Page:20 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128 K x 36) Flow-Through SRAM with NoBL??Architecture

文件:567.3 Kbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:托盘 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

同步 SRAM

Infineon

英飞凌

4-Mbit (128 K x 36) Flow-Through SRAM with NoBL??Architecture

文件:567.3 Kbytes Page:21 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128 K 횞 36) Flow-Through SRAM with NoBL??Architecture

文件:550.32 Kbytes Page:20 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1351产品属性

  • 类型

    描述

  • 型号

    CY7C1351

  • 制造商

    Cypress Semiconductor

  • 功能描述

    Electronic Component

更新时间:2025-10-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
LQFP-100
5591
百分百原装正品,可原型号开票
CYPRESS
25+
QFP
750
原装正品,假一罚十!
CY
20+
QFP
3242
英卓尔科技,进口原装现货!
INFINEON
24+
N/A
10000
只做原装,实单最低价支持
CYPRESS
2023+
QFP
53500
正品,原装现货
CYPRESS/赛普拉斯
25+
NA
880000
明嘉莱只做原装正品现货
CYPRESS
25+
QFP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
CYP
23+
NA
346
专做原装正品,假一罚百!
CYPRESS/赛普拉斯
2450+
QFP
8850
只做原装正品假一赔十为客户做到零风险!!
CY
25+23+
QFP
13397
绝对原装正品全新进口深圳现货

CY7C1351数据表相关新闻