型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1351F

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

IC SRAM 4.5M PARALLEL 100TQFP

Infineon

英飞凌

4-Mbit (128K x 36) Flow-through SRAM with NoBL??Architecture

Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic requi

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1351F产品属性

  • 类型

    描述

  • 型号

    CY7C1351F

  • 功能描述

    IC SRAM 4.5MBIT 100MHZ 100LQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    96

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    FLASH

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    70ns

  • 接口

    并联

  • 电源电压

    2.65 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

更新时间:2025-10-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
BGA119
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
24+
NA/
750
优势代理渠道,原装正品,可全系列订货开增值税票
CYPRESS
25+
QFP
750
原装正品,假一罚十!
CY
20+
QFP
3242
英卓尔科技,进口原装现货!
CY
2023+
QFP
50000
原装现货
CYPRESS/赛普拉斯
25+
NA
880000
明嘉莱只做原装正品现货
CYPRESS
25+
QFP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
CYPRESS
25+23+
BGA
20089
绝对原装正品全新进口深圳现货
CY
25+
QFP
4500
全新原装、诚信经营、公司现货销售!
CYRESS?
23+
TQFP
5700
绝对全新原装!现货!特价!请放心订购!

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