128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache SRAM

Functional Description This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRA

128K x 36 Synchronous-Pipelined Cache RAM

Functional Description The CY7C1347B is a 3.3V, 128K by 36 synchronous-pipelined cache SRAM designed to support zero-wait-state secondary cache with minimal glue logic. The CY7C1347B I/O pins can operate at either the 2.5V or the 3.3V level, the I/O pins are 3.3V tolerant when VDDQ = 2.5V. All

4-Mbit (128K x 36) Pipelined Sync SRAM

Functional Description[1] The CY7C1347F is a 3.3V, 128K by 36 synchronous-pipelined SRAM designed to support zero-wait-state secondary cache with minimal glue logic. CY7C1347F I/O pins can operate at either the 2.5V or the 3.3V level, the I/O pins are 3.3V tolerant when VDDQ = 2.5V. All synchro

4-Mbit (128K x 36) Pipelined Sync SRAM

Functional Description The CY7C1347G is a 3.3V, 128K x 36 synchronous-pipelined SRAM designed to support zero-wait-state secondary cache with minimal glue logic. CY7C1347G IO pins can operate at either the 2.5V or the 3.3V level; the IO pins are 3.3V tolerant when VDDQ = 2.5V. All synchronous i

4-Mbit (128 K x 36) Pipelined Sync SRAM Asynchronous output enable

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