CY7C1339价格

参考价格:¥26.3182

型号:CY7C1339G-133AXC 品牌:Cypress 备注:这里有CY7C1339多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1339批发/采购报价,CY7C1339行情走势销售排行榜,CY7C1339报价。
型号 功能描述 生产厂家 企业 LOGO 操作

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous Pipelined Cache RAM

Functional Description The CY7C1339B is a 3.3V, 128K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. The CY7C1339B I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V-tolerant when VDDQ = 2.5V. All

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (128K x 32) Pipelined Sync SRAM

Functional Description[1] The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). Features •

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4 - MBIT ( 128K X 32 ) PIPELINED SYNC SRAM

Functional Description[1] The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1339产品属性

  • 类型

    描述

  • 型号

    CY7C1339

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-10-22 11:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
2016+
TQFP100
6000
公司只做原装,假一罚十,可开17%增值税发票!
CYPRESS
23+
QFP
8560
受权代理!全新原装现货特价热卖!
CYPRESS/赛普拉斯
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Cypress Semiconductor Corp
23+
100-TQFP14x20
7300
专注配单,只做原装进口现货
CYPRESS
24+
TQFP-100
2500
原装现货热卖
Cypress
23+
100-LQFP(14x20)
1389
专业分销产品!原装正品!价格优势!
CYPRESS
24+
QFP
597
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
CypressSemiconductorCorp
19+
68000
原装正品价格优势

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