型号 功能描述 生产厂家&企业 LOGO 操作
CY7C129

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata ThisdocumentdescribestheDOFFissueforQDRII/DDRIIandtheOutputBufferandJTAGissuesforQDRI/DDRI/QDRII/DDRII.Detailsincludetriggerconditions,possibleworkaroundsandsiliconrevisionapplicability.Thisdocumentshouldbeusedtocomparetoth

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64KX18SynchronousBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:9and10

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64KX18SynchronousBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:9and10

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64KX18SynchronousBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:9and10

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64KX18SynchronousBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:9and10

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Fisa131,072x18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrem

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Fisa131,072x18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrem

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Hisa64Kx18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrements

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Hisa64Kx18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrements

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Hisa64Kx18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrements

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Hisa64Kx18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrements

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)Flow-ThroughSyncSRAM

FunctionalDescription[1] TheCY7C1297Hisa64Kx18synchronouscacheRAMdesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcountercapturesthefirstaddressinaburstandincrements

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx18SynchronousBurstRAMPipelinedOutput

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. Features •Fastaccesstimes:5,6,7,

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx18SynchronousBurstRAMPipelinedOutput

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. Features •Fastaccesstimes:5,6,7,

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx18SynchronousBurstRAMPipelinedOutput

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. Features •Fastaccesstimes:5,6,7,

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx18SynchronousBurstRAMPipelinedOutput

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. Features •Fastaccesstimes:5,6,7,

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx18SynchronousBurstRAMPipelinedOutput

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvanceddouble-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. Features •Fastaccesstimes:5,6,7,

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

FunctionalDescription[1] TheCY7C1298HSRAMintegrates64Kx18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation. Features •Registeredinputsandoutputsforpipelinedoperation •Optimalforperformance(Double-Cycledeselect)

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

FunctionalDescription[1] TheCY7C1298HSRAMintegrates64Kx18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation. Features •Registeredinputsandoutputsforpipelinedoperation •Optimalforperformance(Double-Cycledeselect)

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

FunctionalDescription[1] TheCY7C1298HSRAMintegrates64Kx18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation. Features •Registeredinputsandoutputsforpipelinedoperation •Optimalforperformance(Double-Cycledeselect)

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

FunctionalDescription[1] TheCY7C1298HSRAMintegrates64Kx18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation. Features •Registeredinputsandoutputsforpipelinedoperation •Optimalforperformance(Double-Cycledeselect)

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

FunctionalDescription[1] TheCY7C1298HSRAMintegrates64Kx18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation. Features •Registeredinputsandoutputsforpipelinedoperation •Optimalforperformance(Double-Cycledeselect)

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

32Kx36DualI/ODualAddressSynchronousSRAM

FunctionalDescription TheCY7C1299ASRAMintegrates32,768×36SRAMcellswithadvancedsynchronousperipheralcircuitry.Itemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwoh

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

32Kx36DualI/ODualAddressSynchronousSRAM

FunctionalDescription TheCY7C1299ASRAMintegrates32,768×36SRAMcellswithadvancedsynchronousperipheralcircuitry.Itemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwoh

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

32Kx36DualI/ODualAddressSynchronousSRAM

FunctionalDescription TheCY7C1299ASRAMintegrates32,768×36SRAMcellswithadvancedsynchronousperipheralcircuitry.Itemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwoh

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata ThisdocumentdescribestheDOFFissueforQDRII/DDRIIandtheOutputBufferandJTAGissuesforQDRI/DDRI/QDRII/DDRII.Detailsincludetriggerconditions,possibleworkaroundsandsiliconrevisionapplicability.Thisdocumentshouldbeusedtocomparetoth

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata

RAM9QDR-I/DDR-I/QDR-II/DDR-IIErrata ThisdocumentdescribestheDOFFissueforQDRII/DDRIIandtheOutputBufferandJTAGissuesforQDRI/DDRI/QDRII/DDRII.Detailsincludetriggerconditions,possibleworkaroundsandsiliconrevisionapplicability.Thisdocumentshouldbeusedtocomparetoth

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

封装/外壳:165-LBGA 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

ETC

知名厂家

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-MbitQDR-II??SRAM2-WordBurstArchitecture

文件:993.68 Kbytes Page:23 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 1MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

文件:332 Kbytes Page:15 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx18)PipelinedDCDSyncSRAM

文件:332 Kbytes Page:15 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C129产品属性

  • 类型

    描述

  • 型号

    CY7C129

  • 功能描述

    静态随机存取存储器 9M QDR2 静态随机存取存储器 B2

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-6-26 17:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
23+
QFP
65600
Cypress(赛普拉斯)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CYPRESS/赛普拉斯
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
24+
TQFP
6980
原装现货,可开13%税票
CYPRESS/赛普拉斯
2021+
TQFP
3628
十年专营原装现货,假一赔十
CYPRESS
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
CYPRESS
2015+
SOP/QFP/PLCC
19889
一级代理原装现货,特价热卖!
CYPRESS
25+23+
TQFP100
21939
绝对原装正品全新进口深圳现货
CY
04+
TQFP/208
100
原装现货海量库存欢迎咨询
CYPRESS
22+
TQFP
8000
原装正品支持实单

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