RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata

RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata This document describes the DOFF issue for QDRII/DDRII and the Output Buffer and JTAG issues for QDRI/DDRI/QDRII/DDRII. Details include trigger conditions, possible workarounds and silicon revision applicability. This document should be used to compare to th

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

64K X 18 Synchronous Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 9 and 10

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297F is a 131,072 x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increm

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297F is a 131,072 x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increm

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments

1-Mbit (64K x 18) Flow-Through Sync SRAM

Functional Description[1] The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

64K x 18 Synchronous Burst RAM Pipelined Output

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced double-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 5, 6, 7,

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Functional Description[1] The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. Features • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect)

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Functional Description[1] The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. Features • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect)

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Functional Description[1] The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. Features • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect)

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Functional Description[1] The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. Features • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect)

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

Functional Description[1] The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. Features • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect)

32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata

RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata This document describes the DOFF issue for QDRII/DDRII and the Output Buffer and JTAG issues for QDRI/DDRI/QDRII/DDRII. Details include trigger conditions, possible workarounds and silicon revision applicability. This document should be used to compare to th

RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata

RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata This document describes the DOFF issue for QDRII/DDRII and the Output Buffer and JTAG issues for QDRI/DDRI/QDRII/DDRII. Details include trigger conditions, possible workarounds and silicon revision applicability. This document should be used to compare to th

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

封装/外壳：165-LBGA 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 165FBGA 集成电路（IC） 存储器

IC SRAM 9M PARALLEL 165FBGA

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

9-Mbit QDR- II??SRAM 2-Word Burst Architecture

文件：993.68 Kbytes Page：23 Pages

1-Mbit (64K x 18) Flow-Through Sync SRAM

1-Mbit (64K x 18) Flow-Through Sync SRAM

封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

1-Mbit (64K x 18) Pipelined DCD Sync SRAM

文件：332 Kbytes Page：15 Pages