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CY14B108N价格

参考价格：￥311.9088

型号：CY14B108N-BA25XI 品牌：Cynergy 3 备注：这里有CY14B108N多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B108N批发/采购报价，CY14B108N行情走势销售排行榜，CY14B108N报价。

型号	功能描述	生产厂家企业	LOGO
CY14B108N	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA20XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA20XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA20XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA20XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP20XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP20XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP20XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP20XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XIT	封装/外壳：48-TFBGA 包装：卷带（TR）描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XIT	nvSRAM (non-volatile SRAM)	Infineon 英飞凌	Infineon
CY14B108N-BA25XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA25XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XI	封装/外壳：48-TFBGA 包装：管件描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XI	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B108N-BA45XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-BA45XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B108N-BA45XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP25XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108N-ZSP45XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock 文件：1.35444 Mbytes Page：29 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.04884 Mbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.01488 Mbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY14B108N产品属性

类型
描述
型号
CY14B108N
制造商
CYPRESS
制造商全称
Cypress Semiconductor
功能描述
8 Mbit(1024K x 8/512K x 16) nvSRAM

CY14B108N供应商更多...

更新时间：2025-10-21 17:43:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
万三科技(深圳)有限公司	CY14B108N-BA45XIT	Cypress(赛普拉斯)	25+	48-TFBGA	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市卓越微芯电子有限公司	CY14B108N-ZSP45XI	CYPRESS	25+	TSSOP	11	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市凌旭科技有限公司	CY14B108N-ZSP45XI	CYPRESS	21+	TSOP54	1372	只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查	询价
深圳市正纳电子有限公司	CY14B108N-ZSP25XI	Cypress(赛普拉斯)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市星宇佳科技有限公司	CY14B108N-ZSP45XI	CYPRESS/赛普拉斯	19+	TSOP-54	140		询价
深圳市禾兴威科技有限公司	CY14B108N-ZSP25XI	Cypress	23+	NA	6800	原装正品,力挺实单	询价
深圳市富达微科技有限公司	CY14B108N-BA25XI	Infineon	24+	48-TFBGA	30000	原厂原装，价格优势，欢迎洽谈！	询价
柒号芯城电子商务(深圳)有限公司	CY14B108N-ZSP45XI	CYPRESS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
贸泽芯城（深圳）电子科技有限公司	CY14B108N-ZSP25XIT	CYPRESS/赛普拉斯	23+	TSOP54	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
千层芯半导体(深圳)有限公司	CY14B108N-ZSP25XI	CYPRESS	24+	SMD	10	“芯达集团”专营军工百分之百原装进口	询价

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CY14B108N参数引脚图相关

CY14B108N数据表相关新闻

CY15B102Q-SXM百分百原装，等你来

CXB3590-0000-000N0YAD32Q

CY15B108QN-40LPXI

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

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