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CY14B108L价格
参考价格：￥311.9088
型号：CY14B108L-BA25XI 品牌：Cynergy 3 备注：这里有CY14B108L多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B108L批发/采购报价，CY14B108L行情走势销售排行榜，CY14B108L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B108L | 8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY14B108L | 8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY14B108L | 8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | | ||
封装/外壳：48-TFBGA 包装：散装 描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.04884 Mbytes Page：33 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.01488 Mbytes Page：31 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock 文件：1.35444 Mbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY14B108L产品属性
- 类型
描述
- 型号
CY14B108L
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
8 Mbit(1024K x 8/512K x 16) nvSRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cypress(赛普拉斯) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
Cypress(赛普拉斯) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
Cypress |
48-FBGA |
40 |
Cypress一级分销,原装原盒原包装! |
||||
CYPRESS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
CYPRESS/赛普拉斯 |
24+ |
TSOP-44 |
9600 |
原装现货,优势供应,支持实单! |
|||
CYPRESS(赛普拉斯) |
24+ |
TSOPII-44 |
5768 |
百分百原装正品,可原型号开票 |
|||
Infineon |
26+ |
44-TSOP |
60000 |
只有原装,可BOM表配单 |
|||
SPANSION(飞索) |
2447 |
FBGA-48(6x10) |
315000 |
299个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Cypress(赛普拉斯) |
25+ |
48-TFBGA |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Cypress Semiconductor Corp |
21+ |
90-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
CY14B108L芯片相关品牌
CY14B108L规格书下载地址
CY14B108L参数引脚图相关
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DdatasheetPDF页码索引
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- P88
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- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
