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CY14B108L价格

参考价格：￥311.9088

型号：CY14B108L-BA25XI 品牌：Cynergy 3 备注：这里有CY14B108L多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B108L批发/采购报价，CY14B108L行情走势销售排行榜，CY14B108L报价。

型号	功能描述	生产厂家企业	LOGO
CY14B108L	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA20XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA20XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA20XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA20XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XC	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XCT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XI	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XIT	8 Mbit (1024K x 8/512K x 16) nvSRAM Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L_11	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L_1106	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XIT	封装/外壳：48-TFBGA 包装：托盘描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B108L-BA25XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA25XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XI	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B108L-BA45XI	封装/外壳：48-TFBGA 包装：散装描述：IC NVSRAM 8MBIT PARALLEL 48FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XIT	nvsRAM（非易失性 SRAM）	Infineon 英飞凌	Infineon
CY14B108L-BA45XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-BA45XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS20XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS25XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XI	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XI	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XIT	8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 文件：952.74 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108L-ZS45XIT	8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM 文件：889.09 Kbytes Page：24 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.04884 Mbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock 文件：1.01488 Mbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B108K	8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock 文件：1.35444 Mbytes Page：29 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY14B108L产品属性

类型
描述
型号
CY14B108L
制造商
CYPRESS
制造商全称
Cypress Semiconductor
功能描述
8 Mbit(1024K x 8/512K x 16) nvSRAM

CY14B108L供应商更多...

更新时间：2025-10-21 17:43:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
万三科技(深圳)有限公司	CY14B108L-ZS45XIT	Infineon(英飞凌)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市凌旭科技有限公司	CY14B108L-ZS45XI	CYPRESS	21+	TSOP	1625	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市振宏微科技有限公司	CY14B108L-BA45XI	Cypress	23+	NA	10726	专做原装正品,假一罚百!	询价
深圳市富达微科技有限公司	CY14B108L-ZS45XI	Infineon	24+	44-TSOP	30000	原厂原装，价格优势，欢迎洽谈！	询价
深圳市粤骏腾电子科技有限公司	CY14B108L-ZS20XI	CYPRESS	24+	TSOP44	5000	十年沉淀唯有原装	询价
柒号芯城电子商务(深圳)有限公司	CY14B108L-ZS45XIT	CYPRESS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
贸泽芯城（深圳）电子科技有限公司	CY14B108L-ZS45XIES	CYPRESS/赛普拉斯	23+	TSOP44	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市明嘉莱科技有限公司	CY14B108L-ZS20XI	CYPRESS/赛普拉斯	25+	TSOP-44	880000	明嘉莱只做原装正品现货	询价
深圳市拓亿芯电子有限公司	CY14B108L-ZS20XI	CYPRESS	23+	TSOP-44	30000	代理全新原装现货,价格优势	询价
深圳诚思涵科技有限公司	CY14B108L-ZS45XI	CYP	18+	TSSOP	85600	保证进口原装可开17%增值税发票	询价

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