8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

文件：952.74 Kbytes Page：25 Pages

8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM

文件：889.09 Kbytes Page：24 Pages

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC NVSRAM 8MBIT PAR 54TSOP II 集成电路（IC） 存储器

nvSRAM (non-volatile SRAM)

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

文件：952.74 Kbytes Page：25 Pages

8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM

文件：889.09 Kbytes Page：24 Pages

nvsRAM（非易失性 SRAM）

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC NVSRAM 8MBIT PAR 54TSOP II 集成电路（IC） 存储器

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor