600V,150mΩ,24A,N沟道基于超级结技术的功率MOSFET

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

HiPerFAST IGBT

HiPerFAST™ IGBT with Diode Combi Pack Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l M

HiPerFAST IGBT

Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOS™ process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface)

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