丝印代码：CU245C；8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)

丝印代码：CU245C；8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)

丝印代码：CU245C；8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V Bidirectional Data Flow, With Near-Zero Propagation Delay Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical) Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

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