SILICON GENERAL PURPOSE DIODE AXIAL LEAD

SILICON GENERAL PURPOSE DIODE AXIAL LEAD FEATURES General lPurpose , Industrial, Military And Space Application , Hermetically Sealed Glass With A Stud On Either Side Of The Glass Passivated Chip Provides Excellent Stability Extremely Low Leakave And Very High Reliability.

SILICON GENERAL PURPOSE DIODE AXIAL LEAD

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

文件：32.36 Kbytes Page：1 Pages