iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-6A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.66OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

P-ChannelEnhancementModePowerMOSFET

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P-ChannelEnhancementModePowerMOSFET

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P?묬hannelDPAKPowerMOSFET

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